VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt Base FEATURES common cathode Ultrafast recovery time 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to JEDEC -JESD 47 3 2 13 Material categorization: Available 1 Anode Anode for definitions of compliance please see 2 1 2 TO-247AC Common www.vishay.com/doc 99912 cathode DESCRIPTION / APPLICATIONS VS-MUR3020WT... is the state of the art ultrafast recovery PRODUCT SUMMARY rectifier specifically designed with optimized performance of Package TO-247AC forward voltage drop and ultrafast recovery time. I 2 x 15 A The planar structure and the platinum doped life time F(AV) control, guarantee the best overall performance, V 200 V R ruggedness and reliability characteristics. V at I 0.85 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper T max. 175 C J motor drives. Diode variation Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per leg 15 Average rectified forward current I F(AV) total device Rated V , T = 150 C 30 R C A Non-repetitive peak surge current per leg I 200 FSM Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 150 C 30 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 15 A - - 1.05 F Forward voltage V F I = 15 A, T = 150 C - - 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 55 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 12 - nH S Revision: 10-Jul-15 Document Number: 94080 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MUR3020WTPbF, VS-MUR3020WT-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -22- ns rr J T = 125 C - 39 - J I = 15 A F T = 25 C - 1.6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.1 - J V = 160 V R T = 25 C - 19 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R --1.5 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC MUR3020WT Revision: 10-Jul-15 Document Number: 94080 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000