VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature AEC-Q101 qualified, meets JESD 201 class 1A TO-247AC modified TO-247AC whisker test Material categorization: Cathode Cathode to base to base for definitions of compliance please see 2 2 www.vishay.com/doc 99912 BENEFITS Reduced RFI and EMI Higher frequency operation 3 1 3 1 Cathode Anode Anode Anode Reduced snubbing VS-60APU06HN3 VS-60EPU06HN3 Reduced parts count DESCRIPTION / APPLICATIONS PRODUCT SUMMARY These diodes are optimized to reduce losses and EMI/RFI in TO-247AC modified (2 pins), Package high frequency power conditioning systems. TO-247AC The softness of the recovery eliminates the need for a I 60 A F(AV) snubber in most applications. These devices are ideally V 600 V R suited for HF welding, power converters and other V at I 1.11 V F F applications where switching losses are not significant t typ. See Recovery table rr portion of the total losses. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Cathode to anode voltage V 600 V R Continuous forward current I T = 116 C 60 F(AV) C Single pulse forward current I T = 25 C 600 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 120 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 60 A - 1.35 1.68 F V Forward voltage V I = 60 A, T = 125 C - 1.20 1.42 F F J I = 60 A, T = 175 C - 1.11 1.30 F J V = V rated - - 50 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 39 - pF T R Revision: 09-Jul-15 Document Number: 93806 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 34 45 F F R Reverse recovery time t T = 25 C -81 - ns rr J T = 125 C - 164 - J I = 60 A F T = 25 C - 7.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 17.0 - J V = 200 V R T = 25 C - 300 - J Reverse recovery charge Q nC rr T = 125 C - 1394 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.63 thJC junction to case K/W Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -5.5 - g Weight -0.2 - oz. 1.2 2.4 N m Mounting torque - (10) (20) (lbf in) Case style TO-247AC modified 60EPU06H Marking device Case style TO-247AC 60APU06H 1000 1000 100 T = 175 C J 100 10 T = 125 C J 1 T = 175 C J T = 125 C J 10 0.1 T = 25 C T = 25 C J J 0.01 1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-15 Document Number: 93806 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R