VFT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.28 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AC Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 1 TYPICAL APPLICATIONS VFT4045BP For use in solar cell junction box as a bypass diode for PIN 1 protection, using DC forward current without reverse bias. PIN 2 MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AC Molding compound meets UL 94 V-0 flammability rating I 40 A F(DC) Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 240 A FSM Terminals: matte tin plated leads, solderable per V at I = 40 A 0.51 V F F J-STD-002 and JESD 22-B102 T max. (AC mode) 150 C OP M3 suffix meets JESD 201 class 1A whisker test T max. (DC forward current) 200 C J Polarity: as marked Package ITO-220AC Mounting Torque: 10 in-lbs maximum Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT4045BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 40 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 240 A FSM Operating junction temperature range (AC mode) T -40 to +150 C OP Isolation voltage from thermal to heatsink t = 1 min V 1500 V AC (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.41 - F I = 20 A T = 25 C 0.50 - F A I = 40 A 0.57 0.67 F (1) Instantaneous forward voltage V V F I = 5 A 0.28 - F I = 20 A T = 125 C 0.41 - F A I = 40 A 0.51 0.63 F T = 25 C - 3000 A A (2) Reverse current V = 45 V I R R T = 125 C 29 85 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89456 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT4045BP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT4045BPUNIT Typical thermal resistance R 4.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AC VFT4045BP-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 100 45 40 T = 150 C A 35 10 T = 125 C A 30 T = 100 C A 25 1 20 15 0.1 10 DC Forward Current at T = 25 C 5 A Thermal Equilibrium 0.01 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 Percent of Rated Peak Reverse Voltage (%) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 100 000 100 T = 25 C J f = 1.0 MHz T = 150 C A V = 50 mV sig p-p 10 000 10 T = 125 C A T = 100 C A 1000 1 T = 25 C A 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Junction Capacitance Revision: 19-Mar-18 Document Number: 89456 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Instantaneous Forward Current (A) DC Forward Current (A) Junction Capacitance (pF) Instantaneous Reverse Current (mA)