VEMD1060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 0805 top view Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 2 Radiant sensitive area (in mm ): 0.23 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Excellent I linearity ra Suitable for visible and near infrared radiation DESCRIPTION Fast response times VEMD1060X01 is a high speed and high sensitive PIN Angle of half sensitivity: = 70 photodiode with a highly linear photoresponse. It is a low Floor life: 72 h, MSL 4, according to J-STD-020 profile surface mount device (SMD) including the chip with a Material categorization: for definitions of compliance 2 0.23 mm sensitive area detecting visible and near infrared please see www.vishay.com/doc 99912 radiation. APPLICATIONS High speed photo detector Small signal detection Proximity sensors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD1060X01 1.8 70 350 to 1070 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile Fig. 6 T 260 C sd Thermal resistance junction / ambient According to EIA / JESD 51 R 270 K/W thJA Rev. 1.1, 30-Jun-16 Document Number: 84295 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -0.9 1.1 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I -0.01 5 nA R ro V = 0 V, f = 1 MHz, E = 0 C -3.8 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -1.7 - pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 350 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --2.6- mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -1.8 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 835 nm TK -0.1 - %/K k e Ik 2 E = 1 mW/cm , = 950 nm, V = 5 V I 1.4 1.8 3 A e R ra Reverse light current 2 E = 1 mW/cm , = 890 nm, V = 5 V I -2.6 - A e R ra Angle of half sensitivity - 70 - deg Wavelength of peak sensitivity - 820 - nm p Range of spectral bandwidth - 350 to 1070 - nm 0.1 Rise time V = 5 V, R = 50 , = 830 nm t -60 - ns R L r Fall time V = 5 V, R = 50 , = 830 nm t -80 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 100 1.4 V = 10 V R V = 10 V R 10 940 nm 1.2 1 865 nm 0.1 1.0 835 nm 0.01 0.8 0.001 0.0001 0.6 -40 -20 0 20 40 60 80 100 -40 -20 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 30-Jun-16 Document Number: 84295 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel