X-On Electronics has gained recognition as a prominent supplier of SUM10250E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SUM10250E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SUM10250E-GE3 Vishay

SUM10250E-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SUM10250E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 250V Vds 20V Vgs D2PAK (TO-263)
Datasheet: SUM10250E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8259 ea
Line Total: USD 3.83

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
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Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 800
Multiples : 800
800 : USD 1.9435
1600 : USD 1.8343
2400 : USD 1.7342
5600 : USD 1.6679

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 3.8259
10 : USD 3.1011
50 : USD 2.8054
100 : USD 2.5096
250 : USD 2.3725

0 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 800
Multiples : 800
800 : USD 2.16
1600 : USD 2
2400 : USD 2

0 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 800
Multiples : 800
800 : USD 1.8604

0 - WHS 5


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 8.0939
10 : USD 2.9063
100 : USD 2.3828
800 : USD 1.8485

0 - WHS 6


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 3.4281
5 : USD 2.9704
7 : USD 2.2652
18 : USD 2.1477

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUM10250E-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM10250E-GE3 and other electronic components in the MOSFET category and beyond.

SUM10250E www.vishay.com Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Tuned for the lowest R -C FOM DS oss 0.031 at V = 10 V 63.5 GS 250 57.6 nC Maximum 175 C junction temperature 0.032 at V = 7.5 V 62.5 GS 100 % R and UIS tested g Material categorization: TO-263 for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies SS - Lighting DD G GG Synchronous rectification Top View DC/DC converter Motor drive switch Ordering Information: S SUM10250E-GE3 (lead (Pb)-free and halogen-free) DC/AC inverter N-Channel MOSFET Solar micro inverter Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 63.5 C Continuous Drain Current (T = 150 C) I J D T = 70 C 36.6 C A Pulsed Drain Current (t = 100 s) I 150 DM Avalanche Current I 60 AS L = 0.1 mH a Single Avalanche Energy E 180 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S16-1322-Rev. A, 04-Jul-16 Document Number: 79026 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM10250E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 250 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 250 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 250 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0247 0.0310 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0255 0.0320 GS D a Forward Transconductance g V = 15 V, I = 30 A - 63 - S fs DS D b Dynamic Input Capacitance C - 3002 - iss Output Capacitance C V = 0 V, V = 125 V, f = 1 MHz - 184 - pF oss GS DS Reverse Transfer Capacitance C -18- rss c Total Gate Charge Q - 57.6 88 g c Gate-Source Charge Q V = 125 V, V = 10 V, I = 60 A - 15.1 - nC gs DS GS D c Gate-Drain Charge Q -18.4- gd Gate Resistance R f = 1 MHz 1.5 3.1 5 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t -93 180 r V = 125 V, R = 2.08 DD L ns c I 60 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g 060 d(off) c Fall Time t -72 144 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 100 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.79 1.2 V SD F GS Reverse Recovery Time t - 212 420 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s - 14.5 29 A RM(REC) F Reverse Recovery Charge Q -1.6 3.2 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1322-Rev. A, 04-Jul-16 Document Number: 79026 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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