SiS426DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 f Definition V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET g 0.0045 at V = 10 V 35 GS 100 % R and UIS Tested 20 13.2 nC g g 0.0058 at V = 4.5 V 35 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK 1212-8 POL DC/DC S 3.3 mm 3.3 mm 1 S D 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View Ordering Information: S SiS426DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS g T = 25 C 35 C g T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 22 A a, b T = 70 C 20 A A Pulsed Drain Current I 70 DM g T = 25 C 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C 3.3 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A , T T Operating Junction and Storage Temperature Range J stg - 55 to 150 C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e Maximum Junction-to-Ambient t 10 s R 24 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. Document Number: 68799 www.vishay.com S12-0214-Rev. C, 30-Jan-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS426DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 20 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 4.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 20 A D(on) DS GS V 10 V, I = 10 A 0.0033 0.0045 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 7 A 0.0046 0.0058 GS D a Forward Transconductance g V = 10 V, I = 10 A 50 S fs DS D b Dynamic C Input Capacitance 1570 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 555 pF oss DS GS C Reverse Transfer Capacitance 195 rss V = 10 V, V = 10 V, I = 10 A 28 42 DS GS D Total Gate Charge Q g 13.2 20 nC Q Gate-Source Charge 3.8 gs V = 10 V, V = 4.5 V, I = 10 A DS GS D Gate-Drain Charge Q 4 gd R Gate Resistance f = 1 MHz 0.2 0.70 1.4 g t Turn-On Delay Time 21 35 d(on) t Rise Time V = 10 V, R = 1 13 26 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 29 55 d(off) t Fall Time 17 30 f ns t Turn-On Delay Time 10 20 d(on) t Rise Time V = 10 V, R = 1 816 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 40 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 35 S C A I Pulse Diode Forward Current 70 SM V I = 3 A, V 0 V Body Diode Voltage 0.75 1.1 V SD S GS Body Diode Reverse Recovery Time t 22 44 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68799 2 S12-0214-Rev. C, 30-Jan-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000