New Product Si7858BDP Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.0025 at V = 4.5 V 40 GS TrenchFET Power MOSFET 12 0.0030 at V = 2.5 V 40 56 nC GS 100 % R Tested g 0.0037 at V = 1.8 V 40 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Low Output Voltage, High Current Synchronous S 6.15 mm 5.15 mm Rectifiers 1 S D 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 12 DS V V Gate-Source Voltage 8 GS a T = 25 C C 40 a T = 70 C 40 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 33 b, c T = 70 C A 26 A I Pulsed Drain Current 70 DM a T = 25 C C 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 48 C T = 70 C 31 C Maximum Power Dissipation P W D b, c T = 25 C A 5.0 b, c T = 70 C A 3.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. Document Number: 66589 www.vishay.com S10-1045-Rev. A, 03-May-10 1New Product Si7858BDP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 15 A 0.0020 0.0025 GS D a R V = 2.5 V, I = 12 A 0.0023 0.0030 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 10 A 0.0029 0.0037 GS D a g V = 10 V, I = 15 A 105 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 5760 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 1730 pF oss DS GS C Reverse Transfer Capacitance 1145 rss V = 6 V, V = 4.5 V, I = 10 A 56 84 DS GS D Q Total Gate Charge g 33 50 nC Q Gate-Source Charge V = 6 V, V = 2.5 V, I = 10 A 5.9 gs DS GS D Q Gate-Drain Charge 12.5 gd R Gate Resistance f = 1 MHz 0.2 0.65 1.3 g Turn-On Delay Time t 25 50 d(on) t Rise Time V = 6 V, R = 0.6 53 100 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 115 200 D GEN g d(off) t Fall Time 30 60 f ns Turn-On Delay Time t 16 32 d(on) t Rise Time V = 6 V, R = 0.6 10 20 r DD L I 10 A, V = 8 V, R = 1 Turn-Off Delay Time t 56 100 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A a I 70 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.62 1.1 V SD S Body Diode Reverse Recovery Time t 40 80 ns rr Q Body Diode Reverse Recovery Charge 33 64 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 22 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66589 2 S10-1045-Rev. A, 03-May-10