Si6415DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETs 0.019 at V = - 10 V 6.5 GS Available - 30 0.030 at V = - 4.5 V 5.2 GS RoHS* COMPLIANT S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common. S S 2 7 Si6415DQ S S 3 6 G D 4 5 Top View D Ordering Information: Si6415DQ-T1 Si6415DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C 6.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.2 A A I Pulsed Drain Current 30 DM a I - 1.5 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit a R 83 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70639 www.vishay.com S-80682-Rev. C, 31-Mar-08 1Si6415DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 25 DS GS J a I V = - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 6.5 A 0.015 0.019 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 5.2 A 0.022 0.030 GS D a g V = - 15 V, I = - 6.5 A 18.5 S Forward Transconductance fs DS D a V I = - 1.5 A, V = 0 V - 0.75 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 47 70 g Q V = - 15 V, V = - 10 V, I = - 6.5 A Gate-Source Charge 9.5 nC gs DS GS D Gate-Drain Charge Q 8 gd t Turn-On Delay Time 16 30 d(on) Rise Time t 17 30 V = - 15 V, R = 15 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 73 110 ns d(off) Fall Time t 31 60 f t I = - 1.5 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 40 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70639 2 S-80682-Rev. C, 31-Mar-08