Si4836DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.003 at V = 4.5 V 25 GS TrenchFET Power MOSFET 12 0.004 at V = 2.5 V 22 GS PWM Optimized 0.005 at V = 1.8 V 19 GS 100 % R Tested g APPLICATIONS Low Voltage Synchronous Rectification Low Voltage LDO Pass Transistor D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4836DY-T1-E3 (Lead (Pb)-free) Si4836DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS T = 25 C 25 17 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 20 13 A A I Pulsed Drain Current (10 s Pulse Width) 60 DM a I 2.9 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.5 1.6 A a P W Maximum Power Dissipation D T = 70 C 2.2 1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 29 35 a R Maximum Junction-to-Ambient thJA Steady State 67 80 C/W Maximum Junction-to-Foot (Drain) Steady State R 13 16 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71692 www.vishay.com S09-0221-Rev. E, 09-Feb-09 1Si4836DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.40 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 9.6 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 9.6 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 25 A 0.0025 0.003 GS D a R V = 2.5 V, I = 22 A 0.0031 0.004 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 19 A 0.004 0.005 GS D a g V = 6 V, I = 25 A 80 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.56 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 51 75 g Gate-Source Charge Q V = 6 V, V = 4.5 V, I = 25 A 6.6 nC gs DS GS D Q Gate-Drain Charge 9.1 gd Gate Resistance R 1.0 1.6 2.7 g t Turn-On Delay Time 35 55 d(on) Rise Time t 41 65 V = 6 V, R = 6 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 190 290 ns d(off) Fall Time t 115 175 f t I = 2.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 60 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 5 V thru 1.5 V GS 50 50 40 40 30 30 20 20 T = 125 C C 25 C 10 10 1 V - 55 C 0 0 012345 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71692 2 S09-0221-Rev. E, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D