X-On Electronics has gained recognition as a prominent supplier of JAN1N5416 unclassified across the USA, India, Europe, Australia, and various other global locations. JAN1N5416 unclassified are a product manufactured by Vishay. We provide cost-effective solutions for unclassified, ensuring timely deliveries around the world.

JAN1N5416 Vishay

JAN1N5416 electronic component of Vishay
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See Product Specifications
Part No.JAN1N5416
Manufacturer: Vishay
Category:Unclassified
Description: Diode Switching 100V 3A 2-Pin Case E
Datasheet: JAN1N5416 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 64.7587 ea
Line Total: USD 64.76

Availability - 2432
Ships to you between
Wed. 19 Jun to Tue. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2432 - WHS 1


Ships to you between Wed. 19 Jun to Tue. 25 Jun

MOQ : 1
Multiples : 1
1 : USD 64.7587
25 : USD 18.9394
50 : USD 16.5244
100 : USD 15.6712

   
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Product Category
RoHS - XON
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We are delighted to provide the JAN1N5416 from our Unclassified category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN1N5416 and other electronic components in the Unclassified category and beyond.

1N5415 thru 1N5420 WWW.Microsemi .COM 1N5415 thru 1N5420 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION APPEARANCE This fast recovery rectifier diode series is military qualified to MIL-PRF-19500/411 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings E Package with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N5415 thru 1N5420 WWW.Microsemi .COM 1N5415 thru 1N5420 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine- I O wave input and a 180 degree conduction angle. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when t changing from the forward direction to the reverse direction and a specified decay point after a peak reverse rr current occurs. GRAPHS FIGURE 1 Typical Reverse Current vs. PIV FIGURE 2 Typical Forward Current vs. Forward Voltage FIGURE 3 Maximum Power vs. Lead Temperature FIGURE 4 Maximum Current vs. Lead Temperature Copyright 2008 Microsemi Page 2 6-11-2008 REV B Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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