IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L www.vishay.com Vishay Siliconix Power MOSFET FEATURES Surface-mount D Available in tape and reel 2 2 I PAK (TO-262) D PAK (TO-263) Dynamic dv/dt rating Available Logic-level gate drive R specified at V = 4 V and 5 V DS (on) GS Available G 175C operating temperature Fast switching Material categorization: for definitions of compliance D G S please see www.vishay.com/doc 99912 D S S G Note * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, R ( )V = 5 V 0.10 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 18 g cost-effectiveness. Q (nC) 4.5 gs 2 The D PAK is a surface-mount power package capable of Q (nC) 12 gd accommodating die sizes up to HEX-4. It provides the Configuration Single highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (IRLZ24L, SiHLZ24L) is available for low profile application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and halogen-free SiHLZ24S-GE3 SiHLZ24L-GE3 Lead (Pb)-free IRLZ24SPbF IRLZ24LPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 17 C Continuous drain current V at 5 V I GS D T = 100 C 12 A C a Pulsed drain current I 68 DM Linear derating factor 0.40 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 110 mJ AS Maximum power dissipation T = 25 C 60 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 444 H, R = 25 , I = 17 A (see fig. 12) DD J g AS c. I 17 A, di/dt 140 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0684-Rev. D, 07-Sep-2020 Document Number: 90416 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 10 A - - 0.10 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 8.5 A - - 0.14 GS D b Forward transconductance g V = 25 V, I = 10 A 7.3 - - S fs DS D Dynamic Input capacitance C - 870 - iss V = 0 V, GS Output capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -53- rss Total gate charge Q -- 18 g I = 17 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 4.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --12 gd Turn-on delay time t -11 - d(on) Rise time t - 110 - r V = 30 V, I = 17 A, DD D ns b R = 9 , R = 1.7 , see fig. 10 g D Turn-off delay time t -23- d(off) Fall time t -41- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 17 S showing the A G integral reverse a Pulsed diode forward current I -- 68 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 17 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 110 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.49 1.5 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90416 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000