VE2045C-E3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.42 V at I = 5 A F F FEATURES TMBS Power pack TO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 3 22 11 TYPICAL APPLICATIONS VE2045C For use in low voltage, high frequency rectifier of switching PIN 1 PIN 2 power supplies, freewheeling diodes, DC/DC converters, CASE and polarity protection application. PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB I 2 x 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-E3 - RoHS-compliant, commercial grade I 100 A FSM Terminals: Matte tin plated leads, solderable per V at I = 10 A (T = 125 C) 0.54 V F F A J-STD-002 and JESD 22-B102 T max. 150 C J E3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Polarity: As marked Diode variations Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VE2045C-E3 UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 20 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F T = 25 C A I = 10 A 0.60 0.70 Instantaneous forward voltage F (1) V V F per diode I = 5 A 0.42 - F T = 125 C A I = 10 A 0.54 0.63 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 3 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms Revision: 20-Dec-13 Document Number: 89980 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VE2045C-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VE2045C-E3UNIT per diode 3.5 R JC Typical thermal resistance per device 2.2 C/W (1)(2) per device R 55 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: P /T < 1 R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VE2045C-E3/45 1.93 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 22 20 o R = R = 2.2 C/W JA JC 18 T = 150 C A 10 16 T = 125 C A 14 12 10 T = 100 C A o 1 T = 25 C, 8 A o R = 55 C/W JA 6 T = 25 C A 4 2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 150 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 8 D = 0.8 7 D = 0.5 T = 150 C A 10 D = 0.3 6 T = 125 C A D = 1.0 D = 0.2 5 1 T = 100 C A D = 0.1 4 0.1 3 T 2 0.01 T = 25 C A D = t /T t 1 p p 0 0.001 0 1 2 3 4 5 6 7 8 9 10 11 12 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Dec-13 Document Number: 89980 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)