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VS3610AE

VS3610AE electronic component of Vanguard
Part No.VS3610AE
Manufacturer: Vanguard
Category:MOSFET
Description: MOSFET N Trench 30V 64A 2.5V @ 250uA 7 mΩ @ 16A,4.5V PDFN3333 RoHS
Datasheet: VS3610AE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3132 ea
Line Total: USD 0.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

VS3610AE More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2685
10 : USD 0.2133
30 : USD 0.1897
100 : USD 0.1602
500 : USD 0.1471
1000 : USD 0.1392

We proudly offer the VS3610AE MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the VS3610AE MOSFET.

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

SemiconductorThe VS3610AE is a 30V, 64A Trench MOSFET manufactured by Vanguard Semiconductor and is RoHS compliant. It has a breakdown voltage of 2.5V, a gate charge of 250uA, an on-state resistance of 7 milli-Ohms at 16A, and 4.5V of body diode forward voltage drop. It is a N-channel power MOSFET with P-Channel Field Stop Trench Technology which offers superior power handling and loss characteristics. In summary, the VS3610AE is an ideal solution for applications that require low on-state and gate charge losses and superior dynamic performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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