X-On Electronics has gained recognition as a prominent supplier of BDX18XJQR-B bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. BDX18XJQR-B bipolar transistors - bjt are a product manufactured by TT Electronics. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

BDX18XJQR-B TT Electronics

BDX18XJQR-B electronic component of TT Electronics
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See Product Specifications
Part No.BDX18XJQR-B
Manufacturer: TT Electronics
Category:Bipolar Transistors - BJT
Description: Semelab TT Electronics TT Electronics
Datasheet: BDX18XJQR-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 79.5939 ea
Line Total: USD 79.59

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 79.5939
5 : USD 77.1851
10 : USD 71.9972
50 : USD 70.9786
100 : USD 68.8563
500 : USD 65.9095
1000 : USD 65.8247

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BDX18XJQR-B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BDX18XJQR-B and other electronic components in the Bipolar Transistors - BJT category and beyond.

SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM High Speed Saturated Switching Hermetic Ceramic Surface Mount Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage 75V CBO V Collector Emitter Voltage 40V CEO V Emitter Base Voltage 6V EBO I Continuous Collector Current 0.8A C P T = 25C Total Power Dissipation at 500mW D A Derate Above 25C 2.86mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Max. Units R Thermal Resistance, Junction To Ambient 350 C/W JA Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: 3391 Issue: 5 Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website: SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ. Max. Units (1) Collector-Emitter V I = 10mA 40 (BR)CEO C Breakdown Voltage Collector-Base V I = 10A 75 V (BR)CBO C Breakdown Voltage Emitter-Base V I = 10A 6 (BR)EBO E Breakdown Voltage Collector-Emitter I V = 3V V = 60V 10 CEX EB CE Cut-Off Current nA I = 0 V = 60V 10 E CB Collector-Base I CBO Cut-Off Current T = 150C 10 A A I I = 0 V = 3V Emitter Cut-Off Current 10 nA EBO C EB I = 150mA I = 15mA 0.3 C B (1) Collector-Emitter V CE(Sat) Saturation Voltage I = 500mA I = 50mA 1.0 C B V I = 150mA I = 15mA 0.6 1.2 C B (1) Base-Emitter V BE(Sat) Saturation Voltage I = 500mA I = 50mA 2.0 C B I = 0.1mA V = 10V 35 C CE I = 1.0mA V = 10V 50 C CE I = 10mA V = 10V 75 C CE (1) h T = -55C DC Current Gain 35 - FE A I = 150mA V = 10V 100 300 C CE I = 150mA V = 1.0V 50 C CE I = 500mA V = 10V 40 C CE DYNAMIC CHARACTERISTICS C V = 10V I = 0 Output Capacitance f = 1.0MHz 8 obo CB E pF C V = 0.5V I = 0 Input Capacitance f = 1.0MHz 30 ibo EB C f I = 20mA V = 20V Transition Frequency f = 100MHz 300 MHz t C CE I = 1.0mA V = 10V f = 1.0kHz 50 300 C CE h Small Signal Current Gain - fe I = 10mA V = 10V f = 1.0kHz 75 375 C CE t V = 30V V = 0.5V Delay Time 10 d CC BE t I = 150mA I = 15mA Rise Time 25 r C B1 ns t V = 30V Storage Time VBE = 0.5V 225 s CC t I = 150mA I = I = 15mA Fall Time 60 f C B1 B2 Note (1) Pulse Width 380s, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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