TPH3206PSB Discontinued 650V GaN FET in TO-220 (source tab) Description Features The TPH3206PSB 650V, 150m Gallium Nitride (GaN) FET JEDEC qualified GaN technology is a normally-off device. It combines state-of-the-art high Dynamic RDS(on)eff production tested voltage GaN HEMT and low voltage silicon MOSFET Robust design, defined by technologiesoffering superior reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Enables AC-DC bridgeless totem-pole PFC designs AN0010: Paralleling GaN FETs Increased power density Reduced system size and weight Overall lower system cost Achieves increased efficiency in both hard- and soft- Ordering Information switched circuits Package Easy to drive with commonly-used gate drivers Part Number Package Configuration GSD pin layout improves high speed design TPH3206PSB 3 lead TO-220 Source Applications Datacom TPH3206PSB Broad industrial TO-220 PV inverter (top view) Servo motor S Key Specifications V (V) 650 DSS V (V) 800 (TR)DSS R (m) max* 180 DS(on)eff Q (nC) typ 52 G RR S D Q (nC) typ 6.2 G * Dynamic on-resistance see Figures 19 and 20 Common Topology Power Recommendations CCM bridgeless totem-pole* 1519W max Hard-switched inverter** 1717W max Conditions: F =45kHz T =115C T =90C insulator between SW J HEATSINK device and heatsink (6 mil Sil-Pad K-10) power de-rates at lower voltages with constant current Cascode Schematic Symbol Cascode Device Structure * VIN=230VAC VOUT=390VDC ** VIN=380VDC VOUT=240VAC Mar. 7, 20 2017 Transphorm Inc. Subject to change without notice. tph3206p.3 1 TPH3206PSB (Discontinued) Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V Transient drain to source voltage 800 V (TR)DSS V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 81 W D C b Continuous drain current T =25C 16 A C I D b Continuous drain current TC=100C 10 A I Pulsed drain current (pulse width: 10s) 60 A DM c (di/dt) Reverse diode di/dt, repetitive 1200 A/s RDMC d (di/dt) Reverse diode di/dt, transient 2400 A/s RDMT T Case -55 to +150 C C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S e T Soldering peak temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Typical Unit R Junction-to-case 1.55 C/W JC R Junction-to-ambient 62 C/W JA Mar. 7, 2017 transphormusa.com tph3206p.3 2