TRS20N65FB SiC Schottky Barrier Diode TRS20N65FBTRS20N65FBTRS20N65FBTRS20N65FB 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: I (Per Leg) / (Both Legs) = 79 A / 158 A FSM (3) Low junction capacitance: C (Per Leg) = 38 pF (typ.) j (4) Low reverse current: I (Per Leg) = 0.5 A (typ.) R 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Anode 2: Cathode (heatsink) 3: Anode TO-247 Start of commercial production 2020-08 2019-2020 2020-07-03 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0TRS20N65FB 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) ) ) ) Characteristics Symbol Note Test Condition Rating Unit Repetitive peak reverse voltage V 650 V RRM Forward DC current I Per Leg 10 A F(DC) Both Legs 20 Forward pulse current I (Note 1) Per Leg 100 FP Both Legs 200 Power dissipation P (Note 2) Per Leg 107 W D Both Legs 214 Non-repetitive peak forward surge current I (Note 3) Per Leg 79 A FSM Both Legs 158 Junction temperature T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 s Note 2: T = 25 c Note 3: f = 50 Hz (half-sine wave, t = 10 ms) 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Note Test Condition Max Unit Thermal resistance (junction-to-case) R (Note 1) Per Leg 1.4 /W th(j-c) Both Legs 0.7 Thermal resistance (junction-to-ambient) R (Note 2) 50 th(j-a) Note 1: T = 25 c Note 2: T = 25 a 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 Electrical Characteristics (Unless otherwise specified, Ta = 25 Electrical Characteristics (Unless otherwise specified, Ta = 25 Electrical Characteristics (Unless otherwise specified, Ta = 25 ) (Per Leg) ) (Per Leg) ) (Per Leg) ) (Per Leg) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage (pulse measurement) V I = 5 A 1.2 V F F I = 10 A 1.45 1.6 F Reverse current (pulse measurement) I V = 650 V 0.5 50 A R R Junction capacitance C V = 400 V, f = 1 MHz 38 pF j R Total junction capacitive Q V = 0.1 to 400 V 24 nC cj R charge 2019-2020 2020-07-03 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0