TC75S63TU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S63TU Single Operational Amplifier (Low Noise Operational Amplifier) TC75S63TU Features Low Noise. V = 7.8nV/ Hz (typ.) V = 3.3 V NI DD Small Phase Delay. -2.5 degrees V = 3.3 V (typ.), f = 2kHz DD Low-current supply. 500A V = 3.3 V (typ.) DD Ultra-compact package. SON5-P-0202-0.65S UFV Weight: 7m g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Supply voltage V , V 6 V DD SS Differential input voltage DV 6 V IN Input voltage V V to V V IN DD SS Output current I 4 mA OUT Power dissipation P 450(Note1) mW D Operating temperature T 40 to 85 C opr Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note1: Mounted on a glass epoxy circuit board of 30 mm 30 mm. Pad dimension of 35mm Operating Ratings (Ta = 25C) Characteristics Symbol Rating Unit Supply voltage V , V 2.2 to 5.5 V DD SS Note2: Do not use this product in a voltage follower circuit or outside the range of the common mode input voltage. (For the common mode input voltage, see DC Characteristics on Page 2). Failure to follow this instruction may cause voltage oscillation. A higher load capacitance will increase the risk of voltage oscillation, even if this product is used within the range of the common mode input voltage. Allow sufficient capacitance value margin when designing your circuit and using this product to prevent voltage oscillation. Start of commercial production 2009-09 1 2014-03-01 TC75S63TU Marking (top view) Pin Connection (top view) V OUT DD 5 4 5 4 S P 1 2 3 1 2 3 IN (+) V IN () SS Electrical Characteristics DC Characteristics (V = 3.3 V, V = GND, Ta = 25C) DD SS Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Input offset voltage V R = 1 k, R = 100 k 1 7 mV 1 IO S F Input offset current I 1 pA IO Input bias current I 1 pA I Common mode input voltage CMV R = 1 k, R = 100 k 0 2.4 V IN 2 S F Voltage gain (open loop) G 100 dB V V R 100 k 3.2 3 OH L Maximum output voltage V V R 100 k 0.1 OL 4 L Common mode input signal CMRR V = 0 to 2.4 V 60 80 dB 2 IN rejection ratio Supply voltage rejection ratio SVRR V = 2.2 to 5.5 V 60 80 dB 1 DD Supply current I 500 650 A 5 DD Source current Isource 1500 A 6 Sink current Isink 1500 A 7 AC Characteristics (V = 3.3 V, V = GND, Ta = 25C) DD SS Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit f = 1 kHz, G = 40 dB, V Equivalent input Noise Voltage V 7.8 nV/Hz NI RS = 100 , Rf = 10 k Unity Gain Cross Frequency f G = 40 dB 3.5 MHz T V Phase delay 8 f = 2 kHz -2.5 degrees D AC Characteristics (V = 1.65 V, V = -1.65V, Ta = 25C) DD SS Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Slew Rate SR 9 G = 12 dB, V = 0.4 V 1.0 V/s V IN 2 2014-03-01