TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: V (V) R (m) I (A) DS DS(on) D 1. Gate 130 V = -4.5V -2.8 2. Source GS -20 3. Drain 190 V = -2.5V -2.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. Package Packing TSM2301CX RFG SOT-23 3Kpcs / 7 Reel Note: G denotes for Halogen Free Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current, V 4.5V. I -2.8 A GS D Pulsed Drain Current, V 4.5V I -8 A GS DM a,b Continuous Source Current (Diode Conduction) I -0.72 A S Ta = 25C 0.9 Maximum Power Dissipation P W D Ta = 75C 0.57 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) T 5 S L Junction to Ambient Thermal Resistance (PCB mounted) R 120 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. c. Surface Mounted on FR4 Board, Document Number: DS P0000258 1 Version: B15 Not Recommended TSM2301 20V P-Channel MOSFET Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250uA BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V -0.45 -- -0.95 V DS GS D GS(TH) Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -9.6V, V = 0V I -- -- -1.0 A DS GS DSS a On-State Drain Current V = -10V, V = -5V I -6 -- -- A DS GS D(ON) V = -4.5V, I = -2.8A -- 85 130 GS D a Drain-Source On-State Resistance R m DS(ON) V = -2.5V, I = -2.0A -- 122 190 GS D a Forward Transconductance V = -5V, I = -4A g -- 6.5 -- S DS D fs Diode Forward Voltage I = -0.75A, V = 0V V -- - 0.8 -1.2 V S GS SD b Dynamic Total Gate Charge Q -- 5.4 10 g V = -6V, I = -2.8A, DS D nC Gate-Source Charge Q -- 0.8 -- gs V = -4.5V GS Gate-Drain Charge Q -- 1.1 -- gd Input Capacitance C -- iss 447 -- V = -6V, V = 0V, DS GS pF Output Capacitance C -- 127 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 80 -- rss c Switching Turn-On Delay Time t -- 5 25 d(on) V = -6V, R = 6, DD L Turn-On Rise Time t -- 19 60 r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- d(off) 95 110 R = 6 G Turn-Off Fall Time t -- 65 80 f Notes: a. pulse test: PW = 300S, duty cycle = 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000258 2 Version: B15 Not Recommended