TS4148RY Taiwan Semiconductor

TS4148 RYG Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F(AV) High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 2 A Compliance to RoHS directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC V at I =100mA 1.00 V F F Halogen-free according to IEC 61249-2-21 T Max. 175 C J APPLICATIONS Package 0805 (Ceramics) Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: 0805(Ceramics) Molding compound meets UL flammability classification rating 94HB Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.006g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive peak reverse voltage V 75 V RRM Forward current I 150 mA F(AV) tp = 1s square wave 0.5 Non-repetitive peak forward surge I A FSM current tp = 8.3ms single half sine 2.0 wave Junction temperature range T -55 to +175 C J Storage temperature range T -55 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-ambient thermal resistance R 375 C/W JA 1 Version:N1803 TS4148 RYG Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT (1) I =100mA, T =25C - 1 Forward voltage per diode V V F J F 25 V =20V T =25C - R J nA Reverse current rated V per R I R (2) diode V =75V T =25C - 5 A R J I =10mA, I =10mA, F R - 4 Reverse recovery time t ns rr R =100 L 1 MHz, V =0V - 4 Junction capacitance C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 5K / 7 Reel TS4148 RYG 0805 10K / 13 Reel TS4148 RBG 2 Version:N1803