X-On Electronics has gained recognition as a prominent supplier of RABS20M M3G bridge rectifiers across the USA, India, Europe, Australia, and various other global locations. RABS20M M3G bridge rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for bridge rectifiers, ensuring timely deliveries around the world.

RABS20M M3G

RABS20M M3G electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.RABS20M M3G
Manufacturer: Taiwan Semiconductor
Category:Bridge Rectifiers
Description: Bridge Rectifiers 300ns 2A 1000V Fast Recovery Bridge Rectifier
Datasheet: RABS20M M3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4083 ea
Line Total: USD 0.41

Availability - 376
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
376 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.3461
100 : USD 0.2438
500 : USD 0.1966
1000 : USD 0.1633
2500 : USD 0.1507
10000 : USD 0.1414
20000 : USD 0.138
40000 : USD 0.1345

76 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 3
Multiples : 1
3 : USD 0.3679
25 : USD 0.2431
83 : USD 0.2002
228 : USD 0.1898
1000 : USD 0.182

     
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We proudly offer the RABS20M M3G Bridge Rectifiers at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RABS20M M3G Bridge Rectifiers.

RABS20M Taiwan Semiconductor 2A, 1000V Glass Passivated Fast Recovery Bridge Rectifiers FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 2 A F High surge current capability V UL Recognized file E-326854 RRM 1000 V RoHS Compliant I 50 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package ABS APPLICATIONS Switching mode power supply (SMPS) Configuration Quad Adapters Lighting application MECHANICAL DATA Case: ABS Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: As marked Weight: 0.096 g (approximately) ABS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RABS20M UNIT Marking code on the device RA20M Repetitive peak reverse voltage V 1000 V RRM Reverse voltage, total rms value V 700 V R(RMS) Forward current I 2 A F 8.3 ms at T = 25C 50 A Surge peak forward current, single half A sine-wave superimposed on rated load I FSM 1.0 ms at T = 25C per diode 120 A A 2 2 2 I t value (of a surge on-state current) at 8.3ms I t 10 A s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:A2004 RABS20M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 39 Junction-to-lead thermal resistance R C/W JL 82 Junction-to-ambient thermal resistance R C/W JA 24 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.0A, T = 25C 1.06 - V F J I = 2.0A, T = 25C 1.16 1.30 V F J (1) Forward voltage per diode V F I = 1.0A, T = 125C 0.89 - V F J I = 2.0A, T = 125C 1.00 1.16 V F J T = 25C - 5 J A (2) Reverse current rated V per diode I R R T = 125C - 90 J A 15 - pF Junction Capacitance per diode 1 MHz, V =4.0V C R j IF=0.5A , IR=1.0A - 300 ns Maximum reverse recovery time per diode t rr I =0.25A RR Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING RABS20M M3G ABS 1,000 / 7 reel RABS20M M2G ABS 5,000 / 13 reel 2 Version:A2004

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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