STS11N3LLH5

STS11N3LLH5 N-channel 30 V, 0.0117 , 11 A, SO-8 STripFET V Power MOSFET Features R DS(on) Type V I DSS D max 5 (1) 8 STS11N3LLH5 30 V < 0.0132 11 A 1. The value is rated according R thj-pcb 4 R * Q industry benchmark DS(on) g 1 Extremely low on-resistance R DS(on) SO-8 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.. Table 1. Device summary Order code Marking Package Packaging STS11N3LLH5 11D3L SO-8 Tape and reel June 2011 Doc ID 15982 Rev 2 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STS11N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 15982 Rev 2 Obsolete Product(s) - Obsolete Product(s)