STPS8H100DEE High voltage power Schottky rectifier Datasheet - production data Description 1& This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC . converters. Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, bypass diode and polarity protection applications. Its low profile was 1& especially designed to be used in applications with space-saving constraints. 1& Table 1. Device summary . Symbol Value . I 8 A F(AV) V 100 V RRM T (max) 175 C j 7 3RZHU)/ V (typ) 0.68 V F Features Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capacity specified High junction temperature ECOPACK 2 compliant component TM: PowerFLAT is a trademark of STMicroelectronics December 2016 DocID023272 Rev 3 1/8 This is information on a product in full production. www.st.comCharacteristics STPS8H100DEE 1 Characteristics Table 2. Absolute ratings (limiting values T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 15 A F(RMS) I Average forward current, = 0.5 Tc = 150 C 8 A F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 100 A FSM p (1) P Repetitive peak avalanche power t = 10 s T = 125 C 480 W ARM j p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -4.5A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 2 6 mA j T = 25 C 0.82 j I = 8 A F T = 125 C - 0.60 0.68 j T = 25 C 0.85 j (2) V Forward voltage drop I = 10 A V F F T = 125 C - 0.62 0.70 j T = 25 C 0.90 j I = 16 A F T = 125 C - 0.68 0.75 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.61 x I + 0.0088 x I F(AV) F (RMS) 2/8 DocID023272 Rev 3