STL6N2VH5 STMicroelectronics

STL6N2VH5 N-channel 20 V, 0.025 typ., 6 A STripFET V Power MOSFET in a PowerFLAT 2x2 package Datasheet production data Features Order code V R max. I P DS DS(on) D TOT 1 2 0.03 (V =4.5 V) GS 3 STL6N2VH5 20 V 6 A 2.4 W 0.04 (V =2.5 V) GS 6 Very low switching gate charge 1 5 2 Very low thermal resistance 4 3 Conduction losses reduced PowerFLAT 2x2 Switching losses reduced 2.5 V gate drive Very low threshold device Figure 1. Internal schematic diagram Applications 2(D) 3(G) 1(D) Switching applications Description This device is an N-channel Power MOSFET D S developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. 6(D) 5(D) 4(S) AM11269v1 Table 1. Device summary Order code Marking Packages Packaging STL6N2VH5 STD1 PowerFLAT 2x2 Tape and reel March 2014 DocID023150 Rev 3 1/14 This is information on a product in full production. www.st.comContents STL6N2VH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID023150 Rev 3