X-On Electronics has gained recognition as a prominent supplier of STD44N4LF6 mosfet across the USA, India, Europe, Australia, and various other global locations. STD44N4LF6 mosfet are a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STD44N4LF6

STD44N4LF6 electronic component of STMicroelectronics
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See Product Specifications
Part No.STD44N4LF6
Manufacturer: STMicroelectronics
Category:MOSFET
Description: STMicroelectronics MOSFET N-Ch 40V 8.9 mOhm 44A STripFET VI Deep
Datasheet: STD44N4LF6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9763 ea
Line Total: USD 2.98

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1

STD44N4LF6 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.9935
5000 : USD 0.9834
10000 : USD 0.9737
15000 : USD 0.9639
20000 : USD 0.9543
25000 : USD 0.9447
30000 : USD 0.9352
50000 : USD 0.926
100000 : USD 0.9166

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.6367

0 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 2.9763
10 : USD 1.1118
100 : USD 0.8313
500 : USD 0.6866
1000 : USD 0.5419
2500 : USD 0.5049

0 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 17
Multiples : 1
17 : USD 1.7404

0 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 14
Multiples : 1
14 : USD 0.7051

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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Additional Infomation About Product

STD44N4LF6 N-channel 40 V, 8.9 m , 44 A DPAK STripFET VI DeepGATE Power MOSFET Features Order code V R max I DSS DS(on) D STD44N4LF6 40 V 12.5 m 44 A 100% avalanche tested 3 Logic level drive 1 Applications DPAK Switching applications Automotive Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the 6th generation of STripFET OR 4 DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging STD44N4LF6 44N4LF6 DPAK Tape and reel October 2011 Doc ID 17171 Rev 4 1/15 www.st.com 15 Contents STD44N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 Doc ID 17171 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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