SMX1J7.5A-TR STMicroelectronics

SMX1J Transil Features A Peak pulse power: 85 W (10/1000 s) 800 W (8/20 s) Stand off voltage 7.5 V K Unidirectional QFN-2L Low leakage current: 1 A at 25 C 2 A at 85 C Figure 1. Functional diagram (top view) Operating T : 150 C j max High power capability at T : 78 W j max Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B: 25 kV HBM (human body model) Description The SMX1J Transil has been designed to protect sensitive equipment against electro-static discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are generally for surges below 85 W 10/1000 s. The Planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. The SMX1J is packaged in QFN-2L. TM: Transil is a trademark of STMicroelectronics October 2010 Doc ID 16180 Rev 3 1/11 www.st.com 11Characteristics SMX1J 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T initial = T 85 W PP j amb T Storage temperature range -65 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I F I = Leakage current V RM RM V = Stand-off voltage RM V = Clamping voltage CL V F VVVVVV VV V CL BR RM R = Dynamic impedance d I RM I = Peak pulse current I PP R I = Breakdown current R T = Voltage temperature coefficient Slope= 1/R d I V = Forward voltage drop PP F Table 2. Electrical characteristics - parameter values (T = 25 C) amb (2) (3) (2) (3) V I R V I R (1) (4) CL PP D CL PP D I max V V I min T RM RM BR R 10/1000 s 10/1000 s 8/20 s 8/20 s Type 25 C 85 C min max max max A V V mA V A VA 10-4/ C SMX1J7.5A 1 2 7.5 8.3 1 14 6.2 0.3 20 40 0.2 6.5 1. Pulse test : t < 50 ms p 2. Surge capability given for both directions for unidirectional and bidirectional types 3. To calculate maximum clamping voltage at other surge level, use the following formula V = V - R x ( I - I ) where I is the surge current in the application CLmax CL D PP PPappli PPappli 4. To calculate V or V versus junction temperature, use the following formule: BR CL V T = V 25 C x (1 + T x (T 25)) BR j BR j V T = V 25 C x (1 + T x (T 25)) CL j CL j Figure 3. Pulse waveform %Ipp Repetitive pulse current t = rise time (s) 100 r t = pulse duration time (s) p 50 0 t t p r 2/11 Doc ID 16180 Rev 3