LDP24ARL STMicroelectronics

LDP24A TRANSIENT PROTECTION LOAD DUMP FEATURES n TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP PROTECTION n COMPLIANT WITH MAIN STANDARDS SUCH AS: ISO / DTR 7637 DESCRIPTION Transient voltage suppressor diodes especially useful in protecting integrated circuits, MOS, hy- brids and other overvoltages sensitive semicon- ductors and components. R6 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Peak pulse load dump overvoltage T = 85C 100 V PP amb See note 1 P Power dissipation on infinite heatsink T = 100C 5 W amb I Non repetitive surge peak forward current. T initial = 25C 500 A FSM j tp=10ms T Storage temperature range. - 65 to + 175 C stg T Maximum operating temperature 175 C j T Maximum lead temperature for soldering 230 C L during 10 sec at 4 mm from case. THERMAL RESISTANCES Symbol Parameter Value Unit 15 C/W R (j-a) Junction ambient thermal resistance on infinite heatsink th L =10mm lead Note 1: For surges greater than the maximum values, the diode will present a short-circuit Anode - Cathode. November 2003 - Ed: 7C 1/5LDP24A I ELECTRICAL CHARACTERISTICS I F Symbol Parameter V Stand-off voltage. RM VV V CL BR V Breakdown voltage. BR V V V Clamping voltage. F CL RM V I Peak pulse current. PP I RM T Temperature coefficient of V . BR C Capacitance I Leakage current at V RM RM V Peak forward voltage drop F I PP Symbol Test Conditions Min. Typ. Max. Unit Ipp Pulse duration: 40ms 30 A I T = 25C V =24V 50 A RM j RM T = 85C V =24V 300 A j RM V T = 25C I = 1mA 25 32 V BR j R V T = 85C see table1 40 V CL j -4 T 10 10 /C C F = 1MHz V = 0V 8000 pF R V I = 10A 0.9 V F FM LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637. Table 1 Impulse N5 Open circuit (voltage curve) (Pulse test n5) Vs (V) 86.5 t Vbat (V) 13.5 U(V) tr Ri () 2 t (ms) 200 (*) offset 90% tr (ms) 10% / 13.5V <10 Vs Number 5 10% 60s between each pulse Vbat t (*) Generator setting 0 2/5