ACST12-7SG-TR STMicroelectronics

ACST12 Transient protected AC power switch Features OUT Triac with overvoltage crowbar technology OUT Low I (<10 mA) or high immunity GT (I <35 mA) version GT G High noise immunity: static dV/dt > 2000 V/s G OUT COM COM Benefits DPAK TO-220AB Enables equipment to meet IEC 61000-4-5 ACST12-7xG ACST12-7xT High off-state reliability with planar technology Need no external over voltage protection Reduces the power passive component count Figure 1. Functional diagram High immunity against fast transients OUT described in IEC 61000-4-4 standards Applications AC mains static switching in appliance and industrial control systems G Drive of medium power AC loads like: Universal drum motor of washing machine COM Compressor for fridge or air conditioner Table 1. Device summary Description Symbol Value Unit The ACST12 series belongs to the ACS/ACST I 12 A T(RMS) family built with the ASD (application specific discrete) technology. This high performance V /V 700 V DRM RRM device is adapted to home appliances or industrial I 10 or 35 mA GT systems and drives loads up to 12 A. This ACST12 switch embeds a TRIAC structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. The ACST12-7S needs a low gate current to be activated (I < 10 mA) and GT in the mean time provides a high electrical noise immunity such as those described in the IEC 61000-4-4 standards. The ACST12-7C offers an extremely high static dV/dt immunity of 2 kV/s minimum. December 2008 Rev 1 1/12 www.st.comCharacteristics ACST12 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB T = 104 C 12 c DPAK I On-state rms current full sine wave A T(RMS) DPAK T = 47 C 2 amb with 1cm of Cu F = 60 Hz t = 16.7 ms 126 A p Non repetitive surge peak on-state current I TSM T initial = 25 C,( full cycle sine wave) j F = 50 Hz t = 20.0 ms 120 A p 2 2 2 ItI t for fuse selection t = 10 ms 95 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 125 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1 A GM p j T Storage temperature range - 40 to + 150 C stg T Operating junction temperature range - 40 to + 125 C j 1. According to test described in IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics Value Unit Symbol Test conditions Quadrant T j ACST12-7Sx ACST12-7Cx Unit (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 35 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 30 50 mA H OUT I I = 1.2 x I I - II - III 25 C MAX. 50 70 mA L G GT (2) dV/dt V = 67% V , gate open 125 C MIN. 200 2000 V/s OUT DRM (dV/dt)c = 15 V/s MIN. 5.3 (2) (dI/dt)c 125 C A/ms Without snubber MIN. 14 V I = 0.1 mA, t = 1 ms 25 C 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/12