DATA SHEET SMS7621-092: 0201 Surface-Mount Low-Barrier Silicon Schottky Diode Anti-Parallel Pair Applications Sub-harmonic mixer circuits Frequency multiplication Features Low barrier height Suitable for use to 26 GHz or higher Very low parasitic impedance: Cp < 0.05 pF, Ls < 0.2 nH Low profile, ultra-miniature 0201 surface-mount packages (MSL1, 260 C per JEDEC J-STD-020) Description The SMS7621-092 is a silicon, low barrier n-type Schottky diode anti-parallel pair. This diode pair can be used for sub-harmonic Skyworks Green products are compliant with mixer circuits and other applications such as frequency all applicable legislation and are halogen-free. multiplication. For additional information, refer to Skyworks Denition of Green, document number The low barrier height produces a very small forward voltage. SQ04-0074. Together with the very low junction capacitance, the small forward voltage provides this diode pair with very low local oscillator power requirements. The package and pin configuration are shown in Figure 1. Terminal 1 Terminal 2 12 Schematic (As Shown) 201742-001 Figure 1. SMS7621-092 Pinout (Bottom View) Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 201742C Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice August 18, 2016 1 DATA SHEET SMS7621-092: SCHOTTKY DIODE ANTI-PARALLEL PAIR Electrical and Mechanical Specifications The absolute maximum ratings of the SMS7621-092 are provided A graph of forward voltage versus forward bias current is shown in Table 1. Electrical specifications are provided in Table 2. in Figure 2. 1 Table 1. SMS7621-092 Absolute Maximum Ratings (Per Junction) Parameter Symbol Minimum Maximum Units Forward current IF 50 mA Dissipated power 25 C PD 75 mW Storage temperature TSTG 65 +200 C Operating temperature TA 65 +150 C Electrostatic discharge: ESD Human Body Model (HBM), Class 0 <250 V 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. 1 Table 2. SMS7621-092 Electrical Specifications (TS = +25 C Per Junction, Unless Otherwise Noted) Parameter Symbol Test Condition Min Typical Max Units 2 Breakdown voltage VB I = 10 A 2 V R Total capacitance CT V = 0 V, f = 1 MHz 0.3 pF R Forward voltage VF IF = 1 mA 260 290 320 mV Total resistance RT IF = 5 mA 15 18 1 Performance is guaranteed only under the conditions listed in this table. 2 It is not possible to nondestructively measure the reverse breakdown voltage of a diode in an anti-parallel pair configuration. This parameter guaranteed by design only. 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 024 6 8 10 Forward Bias Current (mA) Figure 2. Forward Voltage vs Forward Current (TS = 25 C) Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 August 18, 2016 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 201742C Forward Voltage (V) 201742-002