RClamp1851ZA Ultra Small RClamp 1-Line, 18V ESD Protection PROTECTION PRODUCTS Description Features High ESD withstand voltage: +/-17kV (contact) and RClamp TVS diodes are designed to protect sensitive +/-20kV (air) per IEC 61000-4-2 electronics from damage or latch-up due to ESD. They Ultra-small package are designed to replace multilayer varistors (MLVs) in Protects one high speed data line portable applications such as cell phones, notebook Low ESD clamping voltage computers, and other portable electronics. This device Working voltage: 18V offers desirable characteristics for board level protection Low capacitance: 0.35pF Typical including fast response time, low operating and clamp- Low leakage current ing voltage, and no device degradation. Low dynamic resistance: 0.16 Ohms Typical Solid-state silicon-avalanche technology RClamp1851ZA is specifically designed for protection of Near Field Communications (NFC) interfaces. It features Mechanical Characteristics extremely good ESD protection characteristics including a low typical dynamic resistance of 0.16 Ohms, low peak SLP0603P2X3F package ESD clamping voltage, and high ESD withstand voltage Pb-Free, Halogen Free, RoHS/WEEE compliant (+/-17kV contact per IEC 61000-4-2). Low typical capac- Nominal Dimensions: 0.6 x 0.3 x 0.25 mm itance (0.35pF at V =0V) means that harmonic distortion R Lead Finish: NiAu the the RF signal is minimized. This device is bidirec- Marking: Marking code tional and has a working voltage of 18V for use on NFC Packaging: Tape and Reel resonator circuits without signal clipping. Applications RClamp1851ZA is in a 2-pin SLP0603P2X3F package measuring 0.6 x 0.3 mm with a nominal height of only Near Field Communication (NFC) lines 0.25mm. Leads are finished with NiAu. The small RF signal lines package gives the designer the flexibility to protect Cellular Handsets single lines in applications where arrays are not FM Antenna practical. The combination of small size and high ESD Tablet PC surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and tablet PCs. Package Dimension Schematic & Pin Configuration 0.600 0.220 0.300 1 0.160 0.355 BSC 2 0.250 SLP0603P2X3F (Bottom View) RClamp1851ZA 1 of 8 www.semtech.com Final Datasheet Rev 4 Semtech Revision Date 10/18/2016Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Current (tp = 8/20s) I 3 A PP (1) ESD per IEC 61000-4-2 (Air) 20 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 17 O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O Reverse Stand-Off Voltage V T = -40 to +85 C 18 V RWM Breakdown Voltage V I = 10 A 18.5 22.5 26.5 V BR BR Reverse Leakage Current I V = 18V, Pin 1 to 2 or Pin2 to 1 <1 50 nA R RWM I = 4A, tp = 0.2/100ns 5.5 2 ESD Clamping Voltage V V C I = 16A, tp = 0.2/100ns 7.5 2,3 Dynamic Resistance R tp = 0.2/100ns 0.16 DYN Junction Capacitance C V = 0V, f = 1MHz 0.35 0.45 pF J R Notes 1) Measured with a 40dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane. 2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 3) Dynamic resistance calculated from I = 4A to I = 16A. TLP TLP 4) Device is electrically symmetrical. RClamp1851ZA 2 of 8 www.semtech.com Final Datasheet Rev 4 Semtech Revision Date 10/18/2016