VMZT6.8NT2L

Data Sheet ESD Protection Diode VMZT6.8N lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 0.4 1 . 2 0 . 1 0 . 1 3 0 . 0 5 0 . 3 2 0 . 0 5 0.4 lFeatures (3) 0.5 1)Ultra small mold type. (VMD3) 2)Low capacitance 0.8 0 0 .1 VMD3 (1) (2) 0 .2 2 0 .0 5 0 .2 2 0 .0 5 0 . 5 0 . 0 5 lConstruction lStructure 0.4 0.4 Silicon epitaxial planer ROHM : VMD3 dot (year week factory) lTaping dimensions (Unit : mm) 0.3 0.1 1.55 0.05 4.0 0.07 2.0 0.04 0.5 0.05 0.6 0.05 1.3 0.05 2.0 0.05 0 0 lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation P 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =5mA 6.47 - 7.14 V z Z Reverse current I - - 0.5 A V =3.5V R R V =0V , f=1MHz Capacitance between terminals Ct - 7.0 - pF R * Zener voltage (V ) shall be measured at 40ms after loading current. Rating of per diode Z www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/3 0 . 8 0 . 1 1 . 2 0 . 1 0.45 1.35 0.05 0 1.75 0.07 0 0.1 5.5 0.2 3.5 0.05 0.45 8.0 0.1 1.15Data Sheet VMZT6.8N 10 1000000 Ta=150 C 100000 Ta=125 C Ta=-25 C 1 10000 1000 Ta=75 C Ta=25 C Ta=125 C 0.1 100 Ta=25 C Ta=75 C Ta=150 C 10 0.01 1 6 6.5 7 7.5 0 1 2 3 4 5 6 7 REVERSE VOLTAGE V (V) ZENER VOLTAGE:Vz(V) R V -I CHARACTERISTICS Vz-Iz CHARACTERISTICS R R 9 100 f=1MHz Ta=25 C I =5mA Z 8 n=30pcs 7 10 6 AVE:6.850V 5 1 4 0 1 2 3 4 5 6 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 200 10 Ta=25 C Ta=25 C V =3.5V f=1MHz R n=10pcs 9 V =0V R 150 n=10pcs 8 100 7 AVE:7.5pF 50 AVE:11.6nA 6 5 0 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) R TERMINALS:Ct(pF) CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:I (pA) ZENER VOLTAGE:Vz( ) R