X-On Electronics has gained recognition as a prominent supplier of SH8K52GZETB mosfet across the USA, India, Europe, Australia, and various other global locations. SH8K52GZETB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SH8K52GZETB

SH8K52GZETB electronic component of ROHM
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See Product Specifications
Part No.SH8K52GZETB
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET 100V NCH+NCH POWER
Datasheet: SH8K52GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6502 ea
Line Total: USD 1.65

Availability - 1941
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1934 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1615
10 : USD 0.974
100 : USD 0.7808
500 : USD 0.6808
1000 : USD 0.5704
2500 : USD 0.5451
5000 : USD 0.5451
10000 : USD 0.5232

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the SH8K52GZETB MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SH8K52GZETB MOSFET.

SH8K52 Datasheet 100V Nch+Nch Power MOSFET llOutline V 100V DSS R (Max.) 170m DS(on) SOP8 I 3.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8K52 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS I Continuous drain current 3.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.0 A AS *2 E Avalanche energy, single pulse 6.5 mJ AS *3 P 2.0 D Power dissipation (total) W *4 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. SH8K52 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *4 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 3A - 120 170 GS D Static drain - source *5 R V = 4.5V, I = 3A - 130 180 m DS(on) GS D on - state resistance V = 4.0V, I = 3A - 135 190 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *5 Y V = 10V, I = 3A 3.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = 50V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a Cu board (25250.8mm) *5 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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