X-On Electronics has gained recognition as a prominent supplier of RV3CA01ZPT2CL mosfet across the USA, India, Europe, Australia, and various other global locations. RV3CA01ZPT2CL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RV3CA01ZPT2CL ROHM

RV3CA01ZPT2CL electronic component of ROHM
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See Product Specifications
Part No.RV3CA01ZPT2CL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET PCH -20V -100MA SS
Datasheet: RV3CA01ZPT2CL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6278 ea
Line Total: USD 0.63

Availability - 11240
Ships to you between
Fri. 14 Jun to Tue. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4991 - WHS 1


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.4404
100 : USD 0.3093
500 : USD 0.2484
1000 : USD 0.1909
2500 : USD 0.1909
8000 : USD 0.1794
24000 : USD 0.176
48000 : USD 0.1713

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RV3CA01ZPT2CL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV3CA01ZPT2CL and other electronic components in the MOSFET category and beyond.

RV3CA01ZP Datasheet Pch -20V -100mA Small Signal MOSFET llOutline DFN0604-3 V -20V DSS R (Max.) 3.8 DS(on) VML0604 I 100mA D P 100mW D llInner circuit llFeatures 1) Ultra Small Package (0.60.40.36mm) 2) Low voltage drive (-1.5V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. 4) Built-in ESD Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Reverse voltage protection Basic ordering unit (pcs) 8000 Overvoltage protection Taping code T2CL Marking RZ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS *1 I Continuous drain current 100 mA D *2 I Pulsed drain current 400 mA DP V Gate - Source voltage 10 V GSS *3 P 100 mW D Power dissipation *4 P 110 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160624 - Rev.002 RV3CA01ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage ESD Protection Diode V I = -11mA, V = 0V -6.8 - -10 V GSS GS DS Zener Voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 4V, V = 0V - - 100 A GSS GS DS Gate threshold voltage V V = V , I = -100A -0.3 - -1.0 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -100mA - 2.5 3.8 GS D Static drain - source *5 R V = -2.5V, I = -50mA - 3.4 5.1 DS(on) GS D on - state resistance V = -1.5V, I = -10mA - 6.0 13.2 GS D *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 Each therminal mounted on a recommended land *4 Pw5s , Duty cycle 1% *5 Pulsed www.rohm.com 2/10 20160624 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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ROHM Semiconductor

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