X-On Electronics has gained recognition as a prominent supplier of RSS065N06FRATB mosfet across the USA, India, Europe, Australia, and various other global locations. RSS065N06FRATB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSS065N06FRATB ROHM

RSS065N06FRATB electronic component of ROHM
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See Product Specifications
Part No.RSS065N06FRATB
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Nch 60V Vds 6.5A 0.031Rds(on) 11Qg
Datasheet: RSS065N06FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8556 ea
Line Total: USD 0.86

Availability - 2053
Ships to you between
Fri. 14 Jun to Tue. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2053 - WHS 1


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8556
10 : USD 0.7406
100 : USD 0.5232
500 : USD 0.4692
1000 : USD 0.4059
2500 : USD 0.3542
5000 : USD 0.3519
10000 : USD 0.3438
25000 : USD 0.3427

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the RSS065N06FRATB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSS065N06FRATB and other electronic components in the MOSFET category and beyond.

RSS065N06FRA Datasheet Nch 60V 6.5A Power MOSFET llOutline V 60V DSS SOP8 R (Max.) 37m DS(on) I 6.5A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RSS065N06 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 6.5 A D *1 I Pulsed drain current 26 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190520 - Rev.002 RSS065N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 6.5A - 24 37 GS D Static drain - source *4 R V = 4.5V, I = 6.5A - 28 44 m DS(on) GS D on - state resistance V = 4.0V, I = 6.5A - 31 48 GS D R Gate resistance f = 1MHz, open drain - 4.0 - G Forward Transfer *4 Y V = 10V, I = 6.5A 4 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20190520 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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