X-On Electronics has gained recognition as a prominent supplier of RSD131P10TL mosfet across the USA, India, Europe, Australia, and various other global locations. RSD131P10TL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSD131P10TL ROHM

RSD131P10TL electronic component of ROHM
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See Product Specifications
Part No.RSD131P10TL
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 100V 13A
Datasheet: RSD131P10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

95: USD 0.4307 ea
Line Total: USD 40.92

Availability - 3997
Ships to you between
Fri. 14 Jun to Thu. 20 Jun
MOQ: 95  Multiples: 1
Pack Size: 1
Availability Price Quantity
2450 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4145
10 : USD 1.1845
100 : USD 0.9487
500 : USD 0.8269
1000 : USD 0.6923
2500 : USD 0.6532
5000 : USD 0.6497
10000 : USD 0.636
25000 : USD 0.6348

3997 - WHS 2


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 89
Multiples : 1
89 : USD 0.4567
100 : USD 0.4404
200 : USD 0.4355
500 : USD 0.429
1000 : USD 0.4209
2500 : USD 0.4112

812 - WHS 3


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 78
Multiples : 1
78 : USD 1.4312
100 : USD 1.3671
250 : USD 1.3122
500 : USD 1.2649

2425 - WHS 4


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 78
Multiples : 1
78 : USD 1.4312
100 : USD 1.3671
250 : USD 1.3122
500 : USD 1.2649
1000 : USD 1.2237
2500 : USD 1.1874

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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We are delighted to provide the RSD131P10TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD131P10TL and other electronic components in the MOSFET category and beyond.

RSD131P10 Datasheet Pch -100V -13A Power MOSFET llOutline TO-252 V -100V DSS SC-63 R (Max.) 200m DS(on) CPT3 I 13A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 Taping code TL Marking 131P10 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS *1 I Continuous drain current 13 A D *2 I Pulsed drain current 52 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170302 - Rev.002 Not Recommended for New Designs RSD131P10 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -6.5A - 135 200 GS D Static drain - source *3 R V = -4.5V, I = -6.5A - 150 220 m DS(on) GS D on - state resistance V = -4.0V, I = -6.5A - 155 230 GS D R Gate resistance f = 1MHz, open drain - 6.0 - G Forward Transfer *3 Y V = -10V, I = -13A 10 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20170302 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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