RSB6.8ZST2N ROHM

Bi direction ESD Protection Diode RSB6.8ZS Data Sheet lApplication lDimensions (Unit : mm) ESD Protection lFeatures 8 00.03 1) Ultra small mold type. (GMD2) ROHM : GMD2 0.270.03 JEDEC : SOD962 0.30.03 JEITA : - 0.30.05 2) Bi direction. dot(year week factory) 3) High reliability lLand size figure (Unit : mm) lStructure 4) By chip-mounter, automatic 0.31 mounting is possible. GMD2 lConstruction lTaping specifications (Unit : mm) Silicon Epitaxial Planar Type lAbsolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit 100 Power dissipation P mW T 150 Junction temperature C j Storage temperature T -55 to +150 C stg T Operation temperature range -55 to +150 C opor lElectrical characteristics (T = 25C) a Parameter Min. Typ. Max. Conditions Symbol Unit V I =1mA Zener voltage 5.78 - 7.82 V Z Z I - - 0.5 V =3.5V Reverse current mA R R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.04 - Rev.B 1/5 0.23 0.60.05 0.38 0.190.03 0.380.03 Data Sheet RSB6.8ZS lElectrical characteristic curves 10 10 apply voltage apply voltage Ta = 125 C Ta = 125 C 1 Ta = 75 C 1 Ta = 75 C Ta= 25 C Ta= 25 C Ta = -25 C Ta = -25 C 0.1 0.1 0.01 0.01 6.5 7 7.5 8 6.5 7 7.5 8 ZENER VOLTAGE : V (V) ZENER VOLTAGE : V (V) Z Z V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) Z Z Z Z 1000 1000 apply voltage apply voltage 100 100 Ta = 125 C Ta = 125 C 10 10 Ta = 75 C 1 1 0.1 0.1 Ta = 75 C 0.01 0.01 Ta= 25 C Ta= 25 C 0.001 0.001 0 1 2 3 4 5 0 1 2 3 4 5 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R R V -I CHARACTERISTICS(2) V -I CHARACTERISTICS(1) R R R R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.04 - Rev.B 2/5 REVERSE CURRENT : I (nA) ZENER CURRENT : I (mA) R Z REVERSE CURRENT : I (nA) ZENER CURRENT : I (mA) R Z