X-On Electronics has gained recognition as a prominent supplier of RRF015P03TL mosfet across the USA, India, Europe, Australia, and various other global locations. RRF015P03TL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RRF015P03TL ROHM

RRF015P03TL electronic component of ROHM
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See Product Specifications
Part No.RRF015P03TL
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 1.5A
Datasheet: RRF015P03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4566 ea
Line Total: USD 0.46

Availability - 75578
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75578 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4566
10 : USD 0.3576
100 : USD 0.2012
1000 : USD 0.1449
3000 : USD 0.1219
9000 : USD 0.1173
24000 : USD 0.1162
99000 : USD 0.1139

1033 - WHS 2


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 5
Multiples : 5
5 : USD 0.221
25 : USD 0.2093
100 : USD 0.1651
275 : USD 0.156

1455 - WHS 3


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 343
Multiples : 1
343 : USD 0.2976
500 : USD 0.2868
1000 : USD 0.2774

10612 - WHS 4


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 186
Multiples : 1
186 : USD 0.2194
200 : USD 0.2177
500 : USD 0.1852
1000 : USD 0.1739
2000 : USD 0.1722
3000 : USD 0.1657
6000 : USD 0.1581

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RRF015P03TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRF015P03TL and other electronic components in the MOSFET category and beyond.

RRF015P03 Datasheet Pch -30V -1.5A Power MOSFET llOutline SOT-323T V -30V DSS TUMT3 R (Max.) 160m DS(on) I 1.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking UJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160531 - Rev.002 RRF015P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 115 160 GS D Static drain - source *4 R V = -4.5V, I = -0.7A - 170 240 m DS(on) GS D on - state resistance V = -4V, I = -0.7A - 190 270 GS D R Gate resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a seramic board (30300.8mm) 2 *3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160531 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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ROHM Semiconductor

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