RQ6E030SPTR ROHM

RQ6E030SP Datasheet Pch -30V -3A Small Signal MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 80m DS(on) TSMT6 I 3A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TR Marking TN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 3 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003 RQ6E030SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -20.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.1 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3A - 60 80 GS D Static drain - source *4 R V = -4.5V, I = -3A - 90 125 m DS(on) GS D on - state resistance V = -4.0V, I = -1.5A - 100 140 GS D Forward Transfer *4 Y V = -10V, I = -1.5A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.