R6507ENJTL ROHM

R6507ENJ Datasheet Nch 650V 7A Power MOSFET llOutline LPT(S) V 650V DSS R (Max.) 0.665 DS(on) I 7A D P 78W D llFeatures llInner circuit 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL Marking R6507ENJ Quantity (pcs) 1000 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 650 V DSS *1 Continuous drain current (T = 25C) I 7 A c D *2 I Pulsed drain current 21 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V Avalanche current, single pulse I 1.3 A AS *3 E Avalanche energy, single pulse 136 mJ AS Power dissipation (T = 25C) P 78 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 R6507ENJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.6 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 200A Gate threshold voltage 2 - 4 V GS(th) DS GS D V = 10V, I = 2.4A GS D Static drain - source *6 R T = 25C - 0.605 0.665 DS(on) j on - state resistance T = 125C - - - j Gate resistance R f = 1MHz, open drain - 10.6 - G www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.