X-On Electronics has gained recognition as a prominent supplier of R6024ENX mosfet across the USA, India, Europe, Australia, and various other global locations. R6024ENX mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

R6024ENX ROHM

R6024ENX electronic component of ROHM
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See Product Specifications
Part No.R6024ENX
Manufacturer: ROHM
Category:MOSFET
Description: Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220FM Bulk
Datasheet: R6024ENX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7795 ea
Line Total: USD 3.78

Availability - 354
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
354 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 3.7795
10 : USD 3.212
25 : USD 3.1153
100 : USD 2.7048
250 : USD 2.572
500 : USD 2.4029
1000 : USD 2.1494
5000 : USD 2.0649

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temperature Classification
Operating Temp Range
Pin Count
Drain-Source On-Volt
Number Of Elements
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Polarity
Type
Mounting
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6024ENX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6024ENX and other electronic components in the MOSFET category and beyond.

R6024ENX Datasheet Nch 600V 24A Power MOSFET llOutline V 600V DSS R (Max.) 0.165 DS(on) TO-220FM I 24A D P 74W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 24 A D *2 Pulsed drain current I 72 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 4.1 A AS *3 Avalanche energy, single pulse E 497 mJ AS *3 E Avalanche energy, repetitive 0.75 mJ AS Power dissipation (T = 25C) P 74 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20200203 - Rev.003 R6024ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 1.7 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 11.3A GS D Static drain - source *5 R T = 25C - 0.150 0.165 DS(on) j on - state resistance T = 125C - 0.320 - j R Gate resistance f =1MHz, open drain - 6.1 - G www.rohm.com 2/12 20200203 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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