EMD3FHAT2R ROHM

EMD3 FHA General purpose (dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-563 V 50V CC SC-107C I 100mA C(MAX.) R 10k 1 R 10k EMT6 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 10k 1 R 10k 2 llFeatures llInner circuit 1)Both the DTA114E chip and DTC114E chip in a EMT package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD3 FHA 1616 T2R 180 8 8000 D3 (EMT6) www.rohm.com 1/7 20160519 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.EMD3 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 -50 V CC V Input voltage -10 to 40 -40 to 10 V IN I Output current 50 -50 mA O *1 I Collector current 100 -100 mA C(MAX) *2*3 P Power dissipation 150 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I V = 5V Input current - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -5mA DC current gain 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. www.rohm.com 2/7 20160519 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.