Datasheet
Serial EEPROM Series Automotive EEPROM
125 Operation SPI BUS EEPROM
BR25H010-2C
General Description
BR25H010-2C is a serial EEPROM of SPI BUS interface method.
Features
High speed clock action up to 10MHz (Max.)
MSOP8, TSSOP-B8, SOP8, SOP-J8 Package
Wait function by HOLDB terminal.
Data at shipment Memory array: FFh, status register
Part or whole of memory arrays settable as read only
BP1, BP0 : 0
memory area by program.
More than 100 years data retention.
2.5V to 5.5V single power source action most
More than 1 million write cycles.
suitable
AEC-Q100 Qualified.
for battery use.
Page write mode useful for initial value write at
Package
factory shipment.
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
Self-timed programming cycle.
Low Supply Current
At write operation (5V) : 1.0mA (Typ.)
At read operation (5V) : 1.0mA (Typ.)
At standby operation (5V) : 0.1A (Typ.)
Address auto increment function at read operation
Prevention of write mistake
Write prohibition at power on.
MSOP8 TSSOP-B8
Write prohibition by command code (WRDI).
2.90mm x 4.00mm x 0.90mm 3.00mm x 6.40mm x 1.20mm
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
SOP8 SOP-J8
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
Page write
Number of pages 16 Byte
Product Number BR25H010-2C
BR25H010-2C
Capacity Bit format Product Number Supply Voltage MSOP8 TSSOP-B8 SOP8 SOP-J8
1Kbit 128x8 BR25H010-2C 2.5V to 5.5V
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays
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TSZ2211114001 DatasheetDatasheet
BR25H010-2C
Absolute maximum ratings (Ta=25C)
Parameter Symbol Limits Unit
Supply Voltage VCC -0.3 to +6.5 V
*1
380(MSOP8)
*2
410(TSSOP-B8)
Permissible Dissipation Pd mW
*3
560(SOP8)
*4
560(SOP-J8)
Storage Temperature Range Tstg -65+150 C
Operating Temperature Range Topr -40 to +125 C
Terminal Voltage -0.3 to VCC+0.3 V
When using at Ta=25 or higher, 3.1mW(*1) , 3.3mW(*2) , 4.5mW (*3,*4)to be reduced per 1
Memory cell characteristics (VCC=2.5V to 5.5V)
Limits
Parameter Unit Condition
Min. Typ. Max.
1,000,000 Cycles Ta85C
*5
Write Cycles 500,000 Cycles Ta105C
300,000 Cycles Ta125C
100 Years Ta25C
*5
Data Retention 60 Years Ta105C
50 Years Ta125C
*5: Not 100% TESTED
Recommended Operating Ratings
Parameter Symbol Limits Unit
Supply Voltage VCC 2.5 to 5.5
V
Input Voltage Vin 0 to VCC
Input / output capacity (Ta=25C, frequency=5MHz)
Parameter Symbol Conditions Min Max Unit
*6
Input Capacity C V =GND 8
IN IN
pF
*6
Output Capacity C V =GND 8
OUT OUT
*6: Not 100% TESTED
www.rohm.com
TSZ02201-0R1R0G100070-1-2
2013 ROHM Co., Ltd. All rights reserved.
2/32
27.Jan.2016 Rev.002
TSZ2211115001