X-On Electronics has gained recognition as a prominent supplier of TAT8857A1H rf amplifier across the USA, India, Europe, Australia, and various other global locations. TAT8857A1H rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

TAT8857A1H

TAT8857A1H electronic component of Qorvo
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Part No.TAT8857A1H
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier BW 40-1000MHz 75 Ohm Dblr
Datasheet: TAT8857A1H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 29.874
25 : USD 24.425
100 : USD 20.825
250 : USD 16.525
500 : USD 13.65
1000 : USD 10.9
2000 : USD 8.975
5000 : USD 7.6875
10000 : USD 7.4625
N/A

Obsolete
     
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RoHS - XON
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TAT8857A1H CATV Doubler Hybrid RFIC Applications CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 , 401000MHz Bandwidth Pin 1 Reference Mark GaAs pHEMT & MESFET Technology 1 16 Out 1A Bias 2A User Configurable Gain: 2127dB 2 15 Lin Adj A In 2A Integrated Linearization 3 14 Out 2A In 1A Flexible Bias Voltage and Current for Optimum Efficiency 4 13 Gate A Bias 1A SOIC-16 Wide Package 5 12 Bias 1B Gate B 6 11 In 1B Out 2B 7 10 Lin Adj B In 2B 8 9 Out 1B Bias 2B Backside Paddle - RF/DC GND General Description Pin Configuration The TAT8857A1H is a cost effective 75 RFIC Amplifier Pin No. Label Pin No. Label designed for use in Doubler CATV applications up to 1 OUT 1A 10 IN 2B 1000MHz. It works with readily available SMT baluns 2 LIN ADJ A 11 OUT 2B and transformers to provide a highly flexible low cost replacement for traditional hybrids. 3 IN 1A 12 GATE B 4 BIAS 1A 13 GATE A Gain of the TAT8857A1H may be easily adjusted by 5 BIAS 1B 14 OUT 2A varying external components, allowing for a family of 6 IN 1B 15 IN 2A Doubler solutions to be developed from a single RFIC. 7 LIN ADJ B 16 BIAS 2A The TAT8857A1H provides integrated linearization to 8 OUT 1B rd Backside improve the 3 order distortion performance. RF/DC GND Paddle 9 BIAS 2B The TAT8857A1H may be protected against transient surges with the TQP200002 and an output high pass filter network. Consult TriQuint for discussion. Ordering Information The TAT8857A1H supports traditional +24V and +12V Part No. Description supply voltages. Bias current may be adjusted to suit TAT8857A1H CATV Doubler RFIC particular requirements with standard or active biasing TAT8857A1H-PCB 24V 401000 MHz Eval. Board approaches. Consult TriQuint for further discussion. TAT8857A1H-PCB 12V 401000 MHz Eval. Board Standard T/R size = 1000 pieces on a 7 reel Data Sheet: Rev. C 06/02/15 Disclaimer: Subject to change without notice - 1 of 12 - 2015 TriQuint Semiconductor, Inc. www.triquint.com / www.qorvo.com TAT8857A1H CATV Doubler Hybrid RFIC Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Supply Voltage (V ) 24 V CC Operation of this device outside the parameter ranges I 350 mA CC given above may cause permanent damage. T 20 +115 C CASE 6 T (for >10 hours MTTF) +150 C J Electrical performance is measured and guaranteed under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+24V, Temp.= +25C, 75 system. CC Parameter Conditions Min Typ Max Units Operational Frequency Range 40 1000 MHz Test Frequency 40 MHz Gain 25 dB 18 dB Input Return Loss Output Return Loss 17 dB +31 dBm Output P1dB f=500 MHz f1=225 MHz, f2=325MHz, Output IP3 +52 dBm Pout= +15 dBm/tone (1) Composite Triple Beat 73 dBc (1) 74 dBc Composite Second Order (1) Composite Intermodulation Noise 60 dB (1) XMOD 68 dBc 4.0 dB Noise Figure V +24 V bias (2) 350 mA I DD Thermal Resistance, Module (junction to case) 3.4 C/W jc Notes: 1. 79ch. NTSC + QAM (6dB offset) to 1003.25 MHz, 13dB uptilt from 55.25 MHz to 1003.25 MHz, 40 dBmV/ch at 55.25 MHz and the equivalent of 53 dBmV/ch at 1003.25 MHz. 2. Active biasing is easily implemented with traditional dual-pnp approaches. Biasing at 12 V is also possible. Data Sheet: Rev. C 06/02/15 Disclaimer: Subject to change without notice - 2 of 12 - 2015 TriQuint Semiconductor, Inc. www.triquint.com / www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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