X-On Electronics has gained recognition as a prominent supplier of QPB8808SR rf amplifier across the USA, India, Europe, Australia, and various other global locations. QPB8808SR rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

QPB8808SR Qorvo

QPB8808SR electronic component of Qorvo
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Part No.QPB8808SR
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier 45-1218MHz NF 4.5dB P1dB +33dBm
Datasheet: QPB8808SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 31.863
25 : USD 25.675
100 : USD 25.5
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the QPB8808SR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPB8808SR and other electronic components in the RF Amplifier category and beyond.

QPB8808 20dB CATV +12V Power Doubler Product Description The QPB8808 is an ultra-linear, QFN GaAs amplifier MMIC intended for output stage amplification in CATV infrastructure applications. The device features a push-pull cascode design which provides flat gain along with ultra-low distortion, making it 40 Pin 5x7 mm QFN Package ideal for use in CATV distribution systems requiring high output power capability. Product Features The QPB8808 draws approximately 525mA from a single 50 1218 MHz Bandwidth +12V supply providing ~20 dB gain with excellent linearity. Excellent High Output Linearity at Reduced Supply Users may adjust the bias current with external voltage Voltages enabling the QPB8808 to be used in applications such as Ultra-Low CSO/CTB/XMOD doublers or for lower power system applications. Low Noise The QPB8808 is packaged in an industry standard 40 pin Excellent Input/Output Return Loss 5 x7 mm QFN package with exposed paddle (EP) beneath High Gain, 20.6 dB typ. at 1218 MHz the device for thermal and electrical grounding Settable bias current Compact 5 X7 mm QFN Package +12V Supply Voltage 525 mA Operating Current Functional Block Diagram Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 1218 MHz 75 Amplifier Ordering Information Part No. Description QPB8808SQ Sample bag 25 pcs QPB8808SR 7 Reel with 100 pcs QPB8808TR13 13 Reel with 2500 pcs QPB8808PCK401 EVB with 5-piece sample bag Data Sheet Rev E, Nov 10, 2016 Subject to change without notice 1 of 6 www.qorvo.com QPB8808 20 dB CATV +12 V Power Doubler Absolute Maximum Ratings Recommended Operating Conditions Parameter Value /Range Parameter Min Typ Max Units Storage Temperature 40 to 100C Device Voltage (VDD) +12 V 6 Operating Temperature 40 to 85C Tj for >10 hours MTTF 150 C Device Voltage (V ) +18V Electrical specifications are measured at specified test conditions. DD Specifications are not guaranteed over all recommended operating Device Current (I ) 650mA DD conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1218 MHz Current (I ) 525 mA DD Gain f = 1218 MHz 20.6 o (1) Gain Flatness 50 to 1218 MHz 0.5 dB (2) Gain Tilt 50 to 1218 MHz +0.75 fo= 50 MHz 20 Input Return Loss fo= 1003 MHz 15 dB f = 1218 MHz 14 o f = 50 MHz 20 o Output Return Loss f = 1003 MHz 18 dB o fo = 1200 MHz 15 CSO 78 dBc Vo= 57dBmV at 1218 MHz, 22 dB extrapolated Notes CTB tilt, 79 analog channels plus 111 digital 79 dBc 3,4 channels (-6dB offset) CCN 58 dB OIP2 f - f = 50MHz, +17dBm / tone +85 dBm 1 2 Notes OIP3 f =550 MHz, f =555 MHz, +17dBm / tone +50 dBm 1 2 3,4 P1dB f =550 MHz +33 dBm o Noise Figure fo=1218 MHz 4.5 dB Thermal Resistance, jb Junction to base 7 C/W Notes: 1. Maximum deviation from a line using least squares fit across the band 50 to 1218 MHz 2. Gain of S21 at 1218 MHz S21 at 50 MHz 3. Standard EB configuration 4. ILIN resistor R1 set to 910 ohms, changing value may further optimize IMD performance Data Sheet Rev E, Nov 10, 2016 Subject to change without notice 2 of 6 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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