QPA1000 2.83.2 GHz 50 Watt GaN Amplifier Product Description Qorvos QPA1000 is a high-power, S-band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC production process. Covering 2.83.2 GHz, the QPA1000 typically provides 47 dBm of saturated output power and 22 dB of large-signal gain while achieving 58 % power-added efficiency. The QPA1000 can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The QPA1000 is matched to 50 ohms with integrated DC Product Features blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems. Frequency Range: 2.8 3.2 GHz Pout: 47 dBm (PIN = 25 dBm) Lead-free and RoHS compliant. Large Signal Gain: 22 dB (P = 25 dBm) IN PAE: 58 % (PIN = 25 dBm) Bias: V = 25 V, I = 200 mA, V = 2.8 V (Typ) D DQ G Supports Long Pulse Operation Package Dimensions: 7.0 x 7.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 Applications 36 1 Military Radar 35 2 Commercial Radar 34 3 33 4 32 5 31 RF Out RF In 6 30 RF Out RF In 7 29 8 28 9 27 10 Ordering Information 26 11 25 12 Part Description 2.83.2 GHz 50 W GaN Power QPA1000 13 14 15 16 17 18 19 20 21 22 23 24 Amplifier QPA1000EVB QPA1000 Evaluation Board - 1 of 14 - Data Sheet Rev. F, April 2021 www.qorvo.com QPA1000 2.83.2 GHz 50 Watt GaN Amplifier Recommended Operating Conditions Absolute Maximum Ratings ConditioConditions Parameter Value/Range Parameter Value Drain Voltage (VD) 40 V Drain Voltage 25 V Drain Current (I /I ) 0.77 / 3.84 A Drain Current (quiescent, I ) 200 mA D1 D2 DQ Gate Voltage Range 8 to 0 V Drain Current (under drive, ID) 3.7 A Gate Current (IG) See plot page 9 Gate Voltage -2.8 V 1 Dissipated Power (P ) 44.25 W Operating Temperature Range 40 to 85C DISS Electrical specifications are measured at specified test Input Power (50 , 85 C) 33 dBm conditions. Specifications are not guaranteed over all Input Power (9:1 VSWR, 85 C) 33 dBm recommended operating conditions. Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Note: 1 TBASE = 85 C, TCH = 225 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: 25 C, VD = 25 V, IDQ = 200 mA, Pulse Width = 100 us, Duty Cycle = 10% Parameter Min Typ Max Units Operational Frequency Range 2.8 3.0 3.2 GHz Output Power (PIN = 25dBm) 46 47 dBm PAE (PIN = 25dBm) 50 58 % Small Signal Gain 25 dB Input Return Loss 11 dB Output Return Loss 13 dB nd 2 Harmonic 27 dBc rd 3 Harmonic 43 dBc Output Power Temperature 0.004 dBm/C Coefficient Recommended Operating 25 V Drain Voltage - 2 of 14 - Data Sheet Rev. F, April 2021 www.qorvo.com