ECG008B-G
InGap HBT Gain Block
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
SOT-89 Package Style
General Purpose Wireless
Product Features Functional Block Diagram
DC4GHz Backside Paddle - GND
+24dBm P1dB at 1GHz
+40dBm OIP3 at 1GHz
15dB Gain at 1GHz
4.6dB Noise Figure
Internally matched to 50
Lead-free/green/RoHS-Compliant SOT-89 Package
1 2 3
RF IN GND RF OUT / V
CC
General Description Pin Configuration
The ECG008B-G is a general-purpose buffer amplifier
Pin No. Label
that offers high dynamic range in a low-cost surface-
1 RF IN
mount package. At 1000MHz, the ECG008B-G typically
2 GND
provides 15dB of gain, +40dBm Output IP3, and
3 RF OUT/VCC
+24dBm P1dB.
Backside Paddle GND
The ECG008B-G consists of Darlington pair amplifiers
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
This broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies. In addition, the ECG0038B-G will satisfy
general amplification requirements in the DC to 4GHz
frequency range such as CATV and mobile wireless.
Ordering Information
Part No. Description
ECG008B-G InGaP HBT Gain Block
ECG008B-PCB 5004000 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7 reel
Data Sheet: Rev. D 12-04-15 Disclaimer: Subject to change without notice
- 1 of 8 -
2015 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
ECG008B-GECG008B-G
InGap HBT Gain Block
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Storage Temperature 65 to +150C T 40 +85 C
CASE
RF Input Power (Continuous) +15dBm Junction Temperature +160 C
Device Current 160mA Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
Operation of this device outside the parameter ranges
recommended operating conditions.
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: V = +9V, R = 14, Temp.=+25C, 50 System
SUPPLY BIAS
Parameter Conditions Min Typ Max Units
Operational Bandwidth DC 4000 MHz
Gain 15 dB
Output P1dB +24 dBm
Freq.=1000 MHz
Pout=+2 dBm/Tone, f=1MHz
Output IP3 +40 dBm
Noise Figure 4.6 dB
13 17.2
Gain 14.3 dB
Input Return Loss 25 dB
Output Return Loss 14 dB
Freq.=2000 MHz
Pout=+2 dBm/Tone, f=1MHz
Output P1dB +23 dBm
Output IP3 +34 +37 dBm
Noise Figure 4.8 dB
Device Voltage +6.8 +7.3 +7.8 V
Device Current 120 mA
Output mismatch w/o spurs 10:1 VSWR
Thermal Resistance 86 C/W
(1)
Typical Device RF Performance
Test conditions unless otherwise noted: VSUPPLY = +9V, ICC = 120 mA (typ.), RBIAS = 14, Temp.=+25C, 50 System
Parameter Typical Units
Frequency 100 500 900 1900 2140 2400 3500 5800 MHz
Gain 14.8 14.7 14.6 14.3 14.3 14.2 14.5 12.4 dB
Input Return Loss 25 26 28.5 28 25 23.2 15.4 6 dB
Output Return Loss 20 19 17 13 13 12 7.9 2.7 dB
Output P1dB +24.5 +24.3 +24 +23.2 +22.8 +21.8 +17.3 dBm
(2)
Output IP3 +41.6 +41 +40 +37 +36 +34 dBm
Noise Figure 4.9 4.7 4.6 4.7 4.9 5.2 dB
Notes:
1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2. Pout =+9 dBm/tone, 1MHz tone spacing.
Data Sheet: Rev. D 12-04-15 Disclaimer: Subject to change without notice
- 2 of 8 -
2015 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com