X-On Electronics has gained recognition as a prominent supplier of AG604-89TRG rf amplifier across the USA, India, Europe, Australia, and various other global locations. AG604-89TRG rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

AG604-89TRG Qorvo

AG604-89TRG electronic component of Qorvo
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Part No.AG604-89TRG
Manufacturer: Qorvo
Category:RF Amplifier
Description: AG60489TRG triquint semiconductor amplifier rf integrated circuits ics semiconductors
Datasheet: AG604-89TRG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.5858 ea
Line Total: USD 1585.8

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 1.5858

     
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RoHS - XON
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We are delighted to provide the AG604-89TRG from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AG604-89TRG and other electronic components in the RF Amplifier category and beyond.

AG604-89 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The AG604-89 is a general-purpose buffer amplifier that DC 2700 MHz offers high dynamic range in a low-cost surface-mount 4 +19.5 dBm P1dB at 900 MHz package. At 900 MHz, the AG604-89 typically provides +33.5 dBm OIP3 at 900 MHz 21 dB of gain, +33.5 dBm OIP3, and +19.5 dBm P1dB. The device combines dependable performance with 21 dB Gain at 900 MHz consistent quality to maintain MTTF values exceeding Single Voltage Supply 1000 years at mounting temperatures of +85 C and is 1 23 Lead-free / RoHS-compliant / housed in a lead-free/green/RoHS-compliant SOT-89 RF IN GND RF OUT Green SOT-89 package industry-standard SMT package. Internally matched to 50 The AG604-89 consists of Darlington pair amplifiers using Function Pin No. the high reliability InGaP/GaAs HBT process technology Input 1 and only requires DC-blocking capacitors, a bias resistor, Output/Bias 3 Applications and an inductive RF choke for operation. Ground 2, 4 Mobile Infrastructure The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies CATV / FTTX such as GPRS, GSM, CDMA, and W-CDMA. In addition, W-LAN / ISM the AG604-89 will work for other various applications RFID within the DC to 2.7 GHz frequency range such as CATV and WiMAX. WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 2700 Frequency MHz 500 900 1900 2140 Test Frequency MHz 900 S21 dB 22.5 21.4 18.2 17.6 Gain dB 21.4 S11 dB -18 -20 -35 -25 Input Return Loss dB 20 S22 dB -16 -12 -10 -10 Output Return Loss dB 12 Output P1dB dBm +19.4 +19.4 +19.0 +19.0 (2) Output P1dB dBm +19.4 Output IP3 dBm +33.5 +33.4 +33.2 +32.9 (2) Output IP3 dBm +33.4 Noise Figure dB 3.5 3.5 3.8 3.8 Output IP2 dBm +45 Noise Figure dB 3.5 Test Frequency MHz 1900 Gain dB 17.2 18.2 19.2 Output P1dB dBm +19 (2) Output IP3 dBm +33.2 Device Voltage V 5.16 Device Current mA 75 1. Test conditions: 25 C, Supply Voltage = +6 V, R = 11.2 , 50 System. bias 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +150 C DC Voltage +7 V Part No. Description RF Input Power (continuous) +10 dBm InGaP HBT Gain Block Junction Temperature AG604-89G +177 C (lead-free/green/RoHS-compliant SOT-89 Package) Thermal Resistance, Rth 154 C / W AG604-89PCB 700 2400 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 3000 pieces on a 13 reel. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 5 June 2008 AG604-89 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, R = 11.2 , I = 75 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 23.2 22.5 21.4 18.2 17.6 16.9 14.4 10.1 S11 dB -20 -18 -20 -35 -25 -25 -19 -15 S22 dB -29 -16 -12 -10 -10 -10 -8 -6 Output P1dB dBm +19.4 +19.4 +19.4 +19.0 +19.0 +18.8 +16.2 Output IP3 dBm +33.6 +33.5 +33.4 +33.2 +32.9 +32.4 Noise Figure dB 3.4 3.5 3.5 3.8 3.8 3.9 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2 , Icc = 75 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 24 0 120 22 100 -10 Optimal operating point 20 80 18 -20 60 40 16 -30 20 14 S11 S22 -40 C +25 C +85 C 0 -40 12 3.43.8 4.24.6 5.05.4 5.8 0123 45 6 01 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Output IP3 vs. Frequency Output IP2 vs. Frequency Noise Figure vs. Frequency 40 50 5 4 35 45 3 30 40 2 25 35 1 -40 C +25 C +85 C -40 C +25 C +85 C -40 C +25 C +85 C 20 0 30 00.5 1 1.522.5 3 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (GHz) Frequency (MHz) Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power P1dB vs. Frequency frequency = 900 MHz frequency = 2000 MHz 20 22 24 18 24 20 20 16 20 15 Gain Gain 18 16 14 16 10 16 12 12 12 5 14 8 10 8 Output Power -40 C +25 C +85 C Output Power 0 12 4 8 4 00.511.5 22.533.5 4 -12 -8 -4 0 4 8 -12 -8 -4 0 4 8 Frequency (GHz) Input Power (dBm) Input Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 5 June 2008 P1dB (dBm) Gain (dB ) OIP3 (dBm) Gain (dB ) OIP2 (dBm) S11, S22 (dB) Output P ow e r (dBm ) Gain (dB ) NF (dB) Device Current (mA) Output P ow e r (dBm )

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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