Product Specification PE4239 SPDT UltraCMOS RF Switch Product Description Features Single-pin or complementary CMOS The PE4239 UltraCMOS RF switch is designed to cover a logic control inputs broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a +3.0V power supply needed for single- low voltage CMOS-compatible control interface, and can be pin control mode controlled using either single-pin or complementary control Low insertion loss: 0.7 dB at 1.0 GHz, inputs. Using a nominal +3V power supply voltage, a typical 0.9 dB at 2.0 GHz input 1 dB compression point of +27 dBm can be achieved. Isolation of 32 dB at 1.0 GHz, 23 dB at 2.0 GHz The PE4239 UltraCMOS RF switch is manufactured on Peregrines UltraCMOS process, a patented variation of silicon- Typical input 1 dB compression point of on-insulator (SOI) technology on a sapphire substrate, offering +27 dBm the performance of GaAs with the economy and integration of Ultra-small 6-lead SC-70 package conventional CMOS. Figure 1. Functional Diagram RFC Figure 2. Package Type SC-70 6-lead SC-70 RF1 RF2 CMOS Control Driver CTRL CTRL or V DD Table 1. Electrical Specifications +25 C, V = 3V (Z = Z = 50) DD S L Parameter Conditions Minimum Typical Maximum Units 1 Operation Frequency DC 3000 MHz 1000 MHz 0.7 0.85 dB Insertion Loss 2000 MHz 0.9 1.05 dB 1000 MHz 30 32 dB Isolation 2000 MHz 21 23 dB 1000 MHz 18 20 dB Return Loss 2000 MHz 16 18 dB ON Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz 300 ns OFF Switching Time 50% CTRL to 25 dB isolation, 1 GHz 200 ns 2 Video Feedthrough 15 mV pp Input 1 dB Compression 2000 MHz 26 27 dBm Input IP3 2000 MHz, 14 dBm input power 43 45 dBm Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50 test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth. Document No. DOC-56568-2 www.psemi.com 2002-2016 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 9 239 . PE4239 Product Specification Figure 3. Pin Configuration (Top View) Table 3. Absolute Maximum Ratings Symbol Parameter/Conditions Min Max Units pin 1 V Power supply voltage -0.3 4.0 V DD 1 6 RF1 CTRL or V DD V + DD V Voltage on any input -0.3 V I 0.3 2 5 GND RFC Storage temperature T -65 150 C ST range 3 4 RF2 CTRL Operating temperature T -55 85 C OP range P Input power (50) 30 dBm IN ESD voltage (Human Table 2. Pin Descriptions V 1500 V ESD Body Model) Pin Pin Description No. Name 1 RF1 RF1 port (Note 1) Table 4. DC Electrical Specifications Ground connection. Traces should be 2 GND physically short and connected to Parameter Min Typ Max Units ground plane for best performance. V Power Supply DD 2.7 3.0 3.3 V 3 RF2 RF2 port (Note 1) Voltage 4 CTRL Switch control input, CMOS logic level. I Power Supply Current DD 250 500 nA (V = 3V, V = 3V) DD CTRL 5 RFC Common RF port for switch (Note 1) Control Voltage High 0.7x V V DD This pin supports two interface options: Control Voltage Low 0.3x V V DD Single-pin control mode. A nominal 3V supply connection is required. CTRL or Complementary-pin control mode. A 6 Electrostatic Discharge (ESD) Precautions V complementary CMOS control signal DD to CTRL is supplied to this pin. By- When handling this UltraCMOS device, observe passing on this pin is not required in this mode. the same precautions that you would use with other ESD-sensitive devices. Although this device Note 1: All RF pins must be DC blocked with an external series contains circuitry to protect it from damage due to capacitor or held at 0 V . DC ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. 2002-2016 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-56568-2 UltraCMOS RFIC Solutions Page 2 of 9