CM400DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 400 Amperes/600 Volts T MEASUREMENT POINT C A D Y Y U K K K H J E B U U H Z AB AA F AC U C2E1 E2 C1 W Description: G QQ Q P N Powerex IGBT Modules are S - NUTS (3 TYP.) designed for use in high T - (4 TYP.) frequency applications 30 kHz for hard switching applications R W W X V V V and 60 to 70 kHz for soft switching applications. Each module Y M consists of two IGBT Transistors C LABEL L in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery G2 free-wheel diode. All components E2 and interconnects are isolated from C2E1 the heat sinking baseplate, offering E2 C1 simplified system assembly and E1 thermal management. G1 Features: Low V CE(sat) Low E SW(off) Outline Drawing and Circuit Diagram Discrete Super-Fast Recovery Dimensions Inches Millimeters Dimensions Inches Millimeters Free-Wheel Diode A 4.25 108.0 Q 0.98 25.0 Isolated Baseplate for Easy Heat Sinking B 2.44 62.0 R 0.11 2.8 C 1.14+0.04/-0.02 29.0+1.0/-0.5 S M6 Metric M6 Applications: D 3.660.01 93.00.25 T 0.26 Dia. 6.5 Dia. Power Supplies Induction Heating E 1.890.01 48.00.25 U 0.002 0.5 Welders F 1.012 25.7 V 0.71 18.0 G 0.16 4.0 W 0.28 7.0 Ordering Information: Example: Select the complete H 0.24 6.0 X 0.16 4.0 part module number you desire J 0.59 15.0 Y 0.3 7.5 from the table below -i.e. K 0.55 14.0 Z 0.325 8.25 CM400DU-12NFH is a 600V (V ), 400 Ampere Dual L 0.87 22.0 AA 0.35 8.85 CES IGBTMOD Power Module. M 0.33 8.5 AB 0.709 18.0 Type Current Rating V N 0.10 2.5 AC 0.69 17.5 CES Amperes Volts (x 50) P 0.85 21.5 CM 400 12 04/13 Rev. 2 1 G1 E1 E2 G2Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-12NFH Dual IGBT NFH-Series Module 400 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM400DU-24NF Units Collector-Emitter Voltage (G-E Short) V 600 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES *2 Collector Current (Operation) I 400 Amperes C *2 Peak Collector Current (Pulse) I 800 Amperes CM *2 *1 Emitter Current (Operation) I 400 Amperes E *2 *1 Peak Emitter Current (Pulse) I 800 Amperes EM *3 Maximum Collector Dissipation (T = 25C) P 960 Watts C C *7 *3 Maximum Collector Dissipation (T = 25C) P 1640 Watts C C Junction Temperature T 40 ~ +150 C j Storage Temperature T 40 ~ +125 C stg Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 Minute) V 2500 Volts ISO Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate-Emitter Threshold Voltage V I = 40mA, V = 10V 5 6 7 Volts GE(th) C CE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Collector-Emitter Saturation Voltage V I = 400A, V = 15V, T = 25C 2.0 2.7 Volts CE(sat) C GE j I = 400A, V = 15V, T = 125C 1.95 Volts C GE j Input Capacitance C 110 nf ies Output Capacitance C V = 10V, V = 0V 7.2 nf oes CE GE Reverse Transfer Capacitance C 4.0 nf res Total Gate Charge Q V = 300V, I = 400A, V = 15V 2480 nC G CC C GE Turn-on Delay Time t 400 ns d(on) Turn-on Rise Time t V = 300V, I = 400A, 200 ns r CC C Turn-off Delay Time t V = 15V, R = 3.1, 700 ns d(off) GE G Turn-off Fall Time t Inductive Load Switching Operation, 150 ns f *1 Reverse Recovery Time t I = 400A 200 ns rr E *1 Reverse Recovery Charge Q 7.7 C rr *1 Emitter-Collector Voltage V I = 400A, V = 0V 2.6 Volts EC E GE *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) *3 Junction temperature (T ) should not increase beyond maximum junction temperature (T ) rating. j j(max) *7 Case temperature (T ) measured point is just under the chips. C 2 04/13 Rev. 2