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CM200DY-34A

CM200DY-34A electronic component of Powerex
Part No.CM200DY-34A
Manufacturer: Powerex
Category:Unclassified
Description: Trans IGBT Module N-CH 1.7KV 200A 7-Pin
Datasheet: CM200DY-34A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 327.0818 ea
Line Total: USD 327.08

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 327.0818

We proudly offer the CM200DY-34A Unclassified at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the CM200DY-34A Unclassified.
     
Manufacturer
Product Category
Collector Current Dc
Collector-Emitter Voltage
Pin Count
Operating Temperature Classification
Rad Hardened
Configuration
Mounting
Operating Temperature Min
Operating Temperature Max
Channel Type
Gate To Emitter Voltage Max
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CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com A-Series Module 200 Amperes/1700 Volts A F F W X G2 G E2 B H E N E1 G G1 C2E1 E2 C1 L K K K (4 PLACES) M NUTS Description: D (3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK PP P Q Q U WIDTH applications. Each module consists of two IGBT Transistors S in a half-bridge configuration with C V each transistor having a reverse- LABEL R connected super-fast recovery free-wheel diode. All components and interconnects are isolated from G2 the heat sinking baseplate, offering simplified system assembly and E2 thermal management. C2E1 E2 C1 Features: Low Drive Power Low V CE(sat) E1 Discrete Super-Fast Recovery G1 Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Dimensions Inches Millimeters Dimensions Inches Millimeters Battery Powered Supplies A 4.25 108.0 N 1.18 30.0 B 2.44 62.0 P 0.71 18.0 Ordering Information: Example: Select the complete C 1.18+0.04/-0.02 30.0+1.0/-0.5 Q 0.28 7.0 part module number you D 3.660.01 93.00.25 R 0.87 22.2 desire from the table below -i.e. E 1.890.01 48.00.25 S 0.33 8.5 CM200DY-34A is a 1700V (V ), CES 200 Ampere Dual IGBTMOD F 0.98 25.0 T 0.02 0.5 Power Module. G 0.24 6.0 U 0.110 2.8 Type Current Rating V H 0.59 15.0 V 0.16 4.0 CES Amperes Volts (x 50) K 0.55 14.0 W 0.85 21.5 CM 200 34 L M6 Metric M6 X 0.94 24.0 M M6 Metric M6 10/13 Rev. 2 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DY-34A Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM200DY-34A Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1700 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES 4 Collector Current (DC, T = 109C)* I 200 Amperes C C 2 Peak Collector Current (Pulse Repetition)* I 400 Amperes CM 1 Emitter Current (T = 25C) I * 200 Amperes C E 2 1 Peak Emitter Current (Pulse Repetition)* I * 400 Amperes EM 2, 4 Maximum Collector Dissipation (T = 25C, T 150C)* * P 1980 Watts C j C Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V 3500 Volts ISO Static Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 2.0 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 20mA, V = 10V 5.5 7.0 8.5 Volts GE(th) C CE 3 Collector-Emitter Saturation Voltage V I = 200A, V = 15V, T = 25C* 2.2 2.8 Volts CE(sat) C GE j 3 I = 200A, V = 15V, T = 125C* 2.45 Volts C GE j Total Gate Charge Q V = 1000V, I = 200A, V = 15V 1330 nC G CC C GE 1 3 Emitter-Collector Voltage V * I = 200A, V = 0V* 3.0 Volts EC E GE Dynamic Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 49.4 nf ies Output Capacitance C V = 10V, V = 0V 5.6 nf oes CE GE Reverse Transfer Capacitance C 1.06 nf res Inductive Turn-on Delay Time t 550 ns d(on) Load Rise Time t V = 1000V, I = 200A, 190 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 2.4, 750 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 350 ns f 1 Diode Reverse Recovery Time t * Switching Operation, 450 ns rr 1 Diode Reverse Recovery Charge Q * I = 200A 20 C rr E *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (T ), and heatsink temperature (T ) measured point is just under the chips. C f 2 10/13 Rev. 2

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