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This literature is subject to all applicable copyright laws and is not for resale in any manner.SGS10N60RUFD 600 V, 10 A Short Circuit Rated IGBT November 2013 SGS10N60RUFD 600 V, 10 A Short Circuit Rated IGBT General Description Features Fairchilds RUFD series of Insulated Gate Bipolar 10 A, 600 V, T = 100C C Transistors (IGBTs) provide low conduction and switching Low Saturation Voltage: V (sat) = 2.2 V I = 10 A CE C losses as well as short circuit ruggedness. The RUFD Typical Fall Time 242ns at T = 125C J series is designed for applications such as motor control, High Speed Switching uninterrupted power supplies (UPS) and general inverters High Input Impedance where short circuit ruggedness is a required feature. Short Circuit Rating Applications Motor Control, UPS, General Inverter C G TO-220F E G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGS10N60RUFD Unit V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C16 A C I C Collector Current T = 100C10 A C I Pulsed Collector Current 30 A CM (1) Diode Continuous Forward Current T = 25 C24 A C I F Diode Continuous Forward Current T = 100C12 A C I Diode Maximum Forward Current 92 A FM T Short Circuit Withstand Time T = 100C10 s SC C P Maximum Power Dissipation T = 25C55 W D C Maximum Power Dissipation T = 100C22 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering T 300 C L purposes, 1/8 from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 2.3 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 3.7 C/W JC R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA 2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com SGS10N60RUFD Rev. C1